2009
DOI: 10.1007/s00340-009-3418-y
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The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

Abstract: Techniques of spectral reflectometry and interferometry are used for measuring small changes in thickness of SiO 2 thin film grown by thermal oxidation on different silicon substrates. A slightly dispersive Michelson interferometer with one of its mirrors replaced by a thin-film structure is used to measure the reflectance and interferometric phase of the thin-film structure at the same time. The experimental data are used to determine precisely thickness of the SiO 2 thin film on silicon wafers of two crystal… Show more

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Cited by 7 publications
(3 citation statements)
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References 11 publications
(25 reference statements)
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“…The thickness and shape measurements of transparent objects are important in engineering. High-precision optical techniques, such as ellipsometry [1], reflectometry [2], white-light interferometry [3], etc. are widely used for the thickness and refractive index of transparent films due to the non-contact, full field and high-efficient characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…The thickness and shape measurements of transparent objects are important in engineering. High-precision optical techniques, such as ellipsometry [1], reflectometry [2], white-light interferometry [3], etc. are widely used for the thickness and refractive index of transparent films due to the non-contact, full field and high-efficient characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…Thin film is a special two-dimensional surface structure on the substrate to improve working performance. It has been widely used in many fields such as semiconductor chips, solar cells, consumer electronics [1][2][3]. For example, in semiconductor chips, electronic isolation or migration is achieved by the gate oxide films, metal films, etc.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the spectral reflectance measurement was possible in the same set-up. These techniques have also been used for measuring small changes in the thickness of a SiO 2 thin film grown by thermal oxidation on different Si substrates [13].…”
Section: Introductionmentioning
confidence: 99%