The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

Abstract

Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear ("ohmic") I-Y characteristics of the Au/ diamond contacts, regardless of the doping level. The proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 4OO'C.

Boron doped diamond electrode for the wastewater treatment

“…17 Early CVD of diamond was carried out by thermal decomposition of carbon-containing gases such as CH 4 3 23,24 to the gas stream, or placing boron powder near the edges of the substrate prior to insertion into the CVD chamber. 25 Since the late 70's and early 80's when CVD was established as an economical, relatively fast and easy process for producing diamond and it has been considered in different reviews and articles. [26][27][28] …”

Defects in Device Grade Homoepitaxial Diamond Thin Films Grown with Ultra-Low CH4/H2 Conditions by Microwave-Plasma Chemical Vapor Deposition

“…Using the above described high quality homoepitaxial diamond films with atomically flat surface grown reproducibly under the conditions of less than 0.15% CH 4 in H 2 , high-quality Schottky junctions between Al and the high-conductivity layers near the surfaces of as-grown films [20,21] have been successfully made.…”

Conductive diamond electrodes for water purification

“…The conductivity of diamond can be improved significantly by doping with boron. Boron doping is usually achieved by adding B 2 H 6 , 5,6 or B(OCH 3 ) 3 7,8 to the gas stream, or placing boron powder near the edges of the substrate prior to insertion into the CVD chamber 9 . Since the late 70's and early 80's, CVD technique was established as an economical, relatively fast and easy process for producing diamond.…”