The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films

Afanasiev, M. S.; Киселев, Д. А.; Levashov, S. A.; Sivov, A A; Чучева, Г. В.

doi:10.1134/s1063783419100032

Search citation statements

Order By: Relevance

Paper Sections

Select...

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2020

2023

Publication Types

Select...

Article4

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1, d), which are characterized by large surface roughness values compared to films doped with manganese and niobium. Table 1 presents the parameters of the root mean square (Rms) and the average (Ra) roughness of the surface of the studied films, as well as the average grain radius (r), calculated according to the procedure described in [12].…”

Section: Resultsmentioning

confidence: 99%

Effect of dopant on piezoelectric and dielectric properties of thin films Bi-=SUB=-3.25-=/SUB=-La-=SUB=-0.75-=/SUB=-Ti-=SUB=-3-x-=/SUB=-A-=SUB=-x-=/SUB=-O-=SUB=-12-=/SUB=- (A --- Mn, Zr, Nb)

Kiselev

Starukhina

Ilina

et al. 2022

Physics of the Solid State

View full text Add to dashboard Cite

It is shown that microstructure, dielectric and piezoelectric properties change in films based on lanthanum-substituted bismuth titanate (BLT) depending on the alloying impurity material, which leads to changes in coercive voltage, internal displacement field and control coefficient. Keywords: lead-free ferroelectric films, bismuth titanate, electrophysical properties, capacitance-voltage characteristics, piezoresponse force microscopy.

show abstract

Section: Resultsmentioning

confidence: 99%