The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers

Sadler, Thomas C.; Kappers, Menno J.; Oliver, Rachel A.

doi:10.1016/j.jcrysgro.2009.04.004

Cited by 35 publications

(48 citation statements)

References 22 publications

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“…Generally, a GaN template is grown on a foreign substrate, like sapphire, silicon or SiC.The nearly lattice-matchedInAlN layers grown on top ofsuch a template usually contain defects like hillocks whoseorigin is unclear, [15][16][17][18][19] dislocations natively present in the GaN template because of GaN growth performed on a foreign substrate, and V-defects. V-defects (or V-pits) are inverted empty pyramids with a hexagonal base, and they aregenerally attributed to threading dislocations.…”

Section: Latelymetalorganic Vapor Phase Epitaxy (Movpe) Is the Commomentioning

confidence: 99%

“…4 for the InAlN and GaN layers is due to the amorphous glue used during sample preparation that is covering the observed region. However, another contrast is visible in the InAlN layer and not inthe GaNsubstrate, especially when using theg= (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) diffraction condition. The same contrasts are visible in InAlN layers outside the V-defects on the plan-view images of Fig.5 andFig.…”

Section: B Phase Separation Due To V-defectsmentioning

confidence: 99%

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Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Perillat-Merceroz

Cosendey

Carlin

et al. 2013

Journal of Applied Physics

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Thanks toits high refractive index contrast, band gap and polarization mismatch compared to GaN, In 0.17 Al 0.83 N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diodes, orhigh electron mobility transistors. In order to study the structural degradation mechanism of InAlN layers with increasing thickness, we performed metalorganic vapor phase epitaxy of InAlN layers of thicknesses ranging from 2 to 500 nm, on free-standing (0001) GaN substrates with a low density of threading dislocations, for In compositions of 13.5% (layers under tensile strain), and 19.7%(layers under compressive strain). In both cases, a surface morphology with hillocks isinitially observed, followed by the appearance of V-defects. We propose that those hillocks arise due to kinetic roughening, and that V-defects subsequently appear beyonda critical hillock size. It is seen that the critical thickness for the appearance of V-defects increases together with the surface diffusion length either by increasing the temperature or the In flux because of asurfactant effect.In thick InAlN layers, a better (worse) In incorporation occurring on the concave (convex) shape surfaces of the V-defects is observed leading to a top phase-separated InAlN layer lying on the initial homogeneous InAlN layerafterV-defects coalescence.It is suggested that similar mechanisms could be responsible for the degradation of thick InGaN layers.

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Section: Latelymetalorganic Vapor Phase Epitaxy (Movpe) Is the Commomentioning

confidence: 99%

Section: B Phase Separation Due To V-defectsmentioning

confidence: 99%

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Perillat-Merceroz

Cosendey

Carlin

et al. 2013

Journal of Applied Physics

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“…The morphology and defect type of the three sample sets have been subject of previous investigations [21,22,38]. All three sample sets revealed similar features.…”

Section: Structural Characterisationmentioning

confidence: 74%

“…All samples were grown under typical MOCVD growth conditions, employing trimethylgallium (TMGa), trimethylindium (TMIn) and trimethylaluminium (TMAl) as metal precursors and ammonia as the group-V precursor. Details have been published previously for series C [22] (10 samples), S [32] (31 samples) and T [21] (10 samples). The majority of the growth templates consisted of GaN/sapphire pre-grown in the same growth reactor as the alloy but the S series includes two samples grown on thick (8-10 µm) commercial GaN-onsapphire templates, and one on a free-standing GaN substrate, all purchased from Lumilog [33].…”

Section: Sample Growthmentioning

confidence: 99%

“…Ternaries with high InN contents are more readily obtained by low temperature growth techniques such as molecular beam epitaxy (MBE) [10][11][12][13] or reactive frequency magnetron sputtering (RFMS) [14][15][16][17][18][19]. On the other hand, many MOCVD groups have grown high quality Al 1−x In x N/GaN in the near-lattice-matched region [3,8,[20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

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Validity of Vegard’s rule for Al_1−xIn_xN (0.08 < x < 0.28) thin films grown on GaN templates

Magalhães

Franco

Watson

et al. 2017

J. Phys. D: Appl. Phys.

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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Ammar

Minj

Gamarra

et al. 2016

Phys. Status Solidi A

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Phone þ33 2 31 45 26 63, Fax: þ33 2 31 45 25 57In this work, we have investigated the non-intentional incorporation of gallium in InAlN layers grown by metal organic vapor phase epitaxy (MOVPE) using two reactors. Atomic force microscopy (AFM) and electron dispersive X-ray spectroscopy (EDS) have been used to characterize the surface morphology and the atomic composition of InAl(Ga) N/GaN structures. The horizontal chamber systematical produces pure ternary layers whereas the close coupled shower head vertical chamber can lead to quaternary alloys. Cleaning the latter significantly reduces the amount of gallium to 1% in the epilayers. Moreover, we show an alternative way to reduce the amount gallium: the use of an intermediate growth pressure typically around 80 Torr drops the inclusion of gallium to 6%. In the presence of such amount of Ga, the growth process appears to be modified and there is a competition between In and Ga for their incorporation, and the Al composition is systematically reduced. The morphology of the layers is also observed to suffer, with the formation of large and closed trenches toward a possible three dimensional growth mode when the layer thickness is increased.

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The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers

Cited by 35 publications

References 22 publications

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Validity of Vegard’s rule for Al_1−xIn_xN (0.08 < x < 0.28) thin films grown on GaN templates

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

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The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers

Cited by 35 publications

References 22 publications

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Validity of Vegard’s rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templates

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

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Validity of Vegard’s rule for Al_1−xIn_xN (0.08 < x < 0.28) thin films grown on GaN templates