The Effect of the CdCl2 Heat Treatment on CdSexTe1-x Solar Cells

Hsu, Chih An; Palekis, Vasilios; Khan, Imran; Collins, S.; Morel, D.L.; Ferekides, C.S.

doi:10.1109/pvsc.2017.8366767

Cited by 7 publications

(4 citation statements)

References 8 publications

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“…The quality of the interface grain structure was captured in the E-image for thick CdSe (≥300 Å) films, showing several voids in the region. Devices with "thick" CdSe (≥300 Å) had been previously found to have poor open-circuit voltage (VOC) [6], likely attributed to the inhomogeneity of the CST alloy and the voids (in addition to the decreased bandgap).…”

Section: A Transition Electron Microscopy (Tem)mentioning

confidence: 99%

“…Also, there is significant Cl diffusion with the increased CdCl2 HT temperature. In addition, through deep-level transient spectroscopy Se-related defect complexes were suggested for the thicker CdSe films [6].…”

Section: B Photoluminescence (Pl)mentioning

confidence: 99%

“…This process has been shown to improve p-type doping, passivate grain boundaries, promote recrystallization and facilitate interdiffusion at the junction between CdTe and CdS [5]. The temperature and duration of the CdCl 2 heat treatment have proven critical for intermixing at the CdSe/CdTe junction [6]. A high temperature treatment was determined essential for increased CdSe interdiffusion with CdTe to form the alloy layer.…”

Section: Introductionmentioning

confidence: 99%

“…A high temperature treatment was determined essential for increased CdSe interdiffusion with CdTe to form the alloy layer. The thickness of the CdSe layer was important, as films with what appeared to be remaining, "unreacted" CdSe showed poor performance [4], [6].…”

Section: Introductionmentioning

confidence: 99%

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Se Profiles in CST Films Formed by Annealing CdTe/CdSe Bi-Layers

Collins

Hsu

Palekis

et al. 2018

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC &Amp

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Se profiles in CST (CdSeXTe1-X) films formed by annealing CdTe/CdSe bilayers has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). The effect of CdSe layer thickness and CdCl2 annealing conditions on the alloy layer were investigated. The CdSe thickness was varied from 75 to 1,500 Å. All "thick" films (CdSe> 300 Å) exhibited smaller grain structure at the interface compared to the "thin" films (CdSe 75-300 Å), which exhibited large columnar grains that extended through the CST/CdTe film thickness. The alloy layer for "thick" CdSe films appeared as a bilayer with two CST compositions: Se-rich and Te-rich. Photoluminescence measurements revealed Se related defects in the films with thicker CdSe (1,000 and 1,500 Å). The Se compositional profile was found to be greatly dependent on the CdSe thickness and CdCl2 heat treatment conditions. The formation of voids at the interface for large CdSe thicknesses suggests that this approach may be only suitable for the formation of relatively low Se content CST films.

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Section: A Transition Electron Microscopy (Tem)mentioning

confidence: 99%

Section: B Photoluminescence (Pl)mentioning

confidence: 99%