The Effect on the Interface and Reliability of SiC MOS by Ar/O₂ Annealing

Abstract

In this paper, SiC MOS capacitors were fabricated and annealed in Ar/O2 = 9:1 ambient with different temperature, and the annealing effects on the reliability and performance of SiC MOS capacitance were investigated. We found that annealing in Ar/O2 ambient is capable to improve the reliability of gate oxide. When annealing in higher temperature, defects near SiO2/SiC interface are reduced, but the gate reliability deteriorated. It is difficult to obtain the best performance and reliability under the same conditions. There is a trade-off between Dit and reliability to adjust the annealing conditions.

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

“…SiC devices are characterized by high-temperature resistance [5]. The increase in temperature will lead to intensified intrinsic excitation of the material, resulting in the unnormal operation of the device.…”