The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell

Hamdani, Dadan; Prayogi, Soni; Cahyono, Yoyok; Yudoyono, Gatut; Darminto, Darminto

doi:10.14710/ijred.2022.40193

Cited by 16 publications

(11 citation statements)

References 23 publications

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“…The form of the sample will have an impact on the measurement correction factor in addition to ensuring that the sample size is as little as possible. 20 The measurement correction factor must also be taken into consideration if the sample shape is circular. 21 As a result, rather than employing a circle as the sample form for the four-point probe measurement of electrical conductivity, a square 1x1 cm 2 in size is used.…”

Section: Resultsmentioning

confidence: 99%

Analysis of Active Layer Thickness on Thin Layer Solar Cell Performance

Prayogi

Darminto

2023

Jurnal Fisika dan Aplikasinya

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The main objective of this research is to fabricate double-layer hydrogenated amorphous silicon (a-Si:H) using a PECVD by varying the thickness of the active layer. To obtain the thickness of the double active layer, dilution of silane plasma is carried out by hydrogen, with a ratio of hydrogen and silane, R=H2/SiH4 varies, and the deposition time of the active layer, while the n-type and n-type extrinsic layers are fixed for each -each sample. Then on the sample, there is a metal coating on the back which acts as an electrical contact and light reflector. Additionally, each sample was examined or searched for with a sun simulator and sunlight for physical properties, such as thickness morphology, optical properties, such as bandgap, electrical properties, such as electrical conductivity, and I-V characterization of a-Si: H double active layer solar cells. Based on the I-V characterization of the a-Si: H double active layer solar cells that were found in this work, a satisfactory conversion efficiency (8.86%) was found, although the Field Factor of the active layer was still low. While the intrinsic photo response reached 105

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Section: Resultsmentioning

confidence: 99%

Analysis of Active Layer Thickness on Thin Layer Solar Cell Performance

Prayogi

Darminto

2023

Jurnal Fisika dan Aplikasinya

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“…Continuity equation for electron and hole within 1D dimension written on these equations (6-7) [10], [12]. Fermi-Dirac distribution function approach has been done with using Maxwell-Boltzmann equation to obtain dependent fermi energy position also value of the local electron-hole current as described equations (8)(9)(10)(11) [11]- [13].…”

Section: A Methodologymentioning

confidence: 99%

“…𝜑 𝐵 = (𝜒 𝑎−𝑆𝑖:𝐻 − 𝐸 𝐺(𝑎−𝑆𝑖:𝐻) ) − 𝑊𝐹 𝑇𝐶𝑂 (13) where 𝜑 𝐵 is barrier height, 𝜒 𝑎−𝑆𝑖:𝐻 as electron affinity on semiconductor layer, 𝐸 𝐺(𝑎−𝑆𝑖:𝐻) is energy gap, and 𝑊𝐹 𝑇𝐶𝑂 as work function of thin conductive-oxide. Dangling-bond defect density (𝑁 𝑡𝑟 ) represents fabrication defect condition on hetero layer for photovoltaic.…”

Section: Table 1 Various Parameters Input For Reconstructing Hit Sola...mentioning

confidence: 99%

Analysis of ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/Al HIT (Heterostructure with Intrinsic Thin Layer) solar cell performances.

Satriani

Munir

Natalisanto

et al. 2023

ELKHA

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Numerical simulation on HIT (Heterostructure with Intrinsic Thin Layer) solar cell using hetero-structure ITO/(p+)a-Si:H/(i)a-Si:H/(n)c-Si/Al solar cell has been done using AFORS-HET (Automate For Simulation of Heterostructure) software. The purpose of this study is to provide validation as well optimization model of solar cell enhanced performances. Data analysis shows a significant increase on solar power generation. An intrinsic thin layer given between the hetero-interface to reduce defect properties on solar cell structure. The optimization using an optimal value of acceptor-donor doping, dangling-bond defects ( ), thin conductive oxide work function ( ), and other input shows a reducing recombination-rates, as a validation Figure of Merits (FOMs) data reach a maximum efficiency value at 23,67% ( = 634,2 mV; = 51,2 mA/cm2; = 72,91%, this result achieved on peak data such = 5,2 eV, Na (doping) = 5.0 x 1019 cm-3, = 1.0 x 1018 cm-3, (interface defect) = 1.0 x 1010 cm-3. The results obtained from this simulation produce a number of optimum parameters that can be followed up experimentally to obtain better solar cell performances.

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“…In the quest of alternative renewable energy sources, thin film solar cell technology seems to be a promising due to the unlimited amount of energy source from the sun. The field of photonics and plasmonics has been propelled greatly in various applications like solar cell, antenna etc (Tran et al, 2020;Schuller et al, 2010;Belhadji, 2022;Hamdani et al, 2022). Last few decades, solar cell technology has been developed and still an expensive as compared to the fossil fuels.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin Film Amorphous Silicon Solar Cell Performance using Rigorous Coupled Wave Analysis Method

Dubey¹,

Saravanan²

2022

Int. J. Renew. Energy Dev.

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The issues related to global energy needs and environmental safeties as well as health crisis are some of the major challenges faced by the human, which make us to generate new pollution-free and sustainable energy sources. For that the optical functional nanostructures can be manipulated the confined light at the nanoscale level. These characteristics are emerging and leading candidate for the solar energy conversion. The combination of photonic (dielectric) and plasmonic (metallic) nanostructures are responsible for the development of better optical performance in solar cells. Here, the enhancement of light trapping within the thin active region is the primary goal. In this work, we have studied the influence of front-ITO (rectangular) and back-Ag (triangular) nanogratings were incorporated with ultrathin film amorphous silicon (a-Si) solar cell by using rigorous coupled wave analysis (RCWA) method. The improvement of light absorption, scattering (large angle), diffraction and field distributions (TE/TM) were demonstrated by the addition of single and dual nanogratings structures. Significantly, the plasmonic (noble metal) nanogratings are located at the bottom of the cell structure as a backside reflector which is helpful for the omni-directional reflection and increased the path length (life time) of the photons due to that the collection of the charge carriers were enhanced. Further, the proposed solar cell structure has optimized and compared to a back-Ag, front-ITO and dual nanogratings based ultrathin film amorphous silicon solar cell. Finally, the obtained results were evidenced for the assistance of photonic and plasmonic modes and achieved the highest current density (Jsc) of 23.82 mA/cm2(TE) and 22.75 mA/cm2 (TM) with in 50 nm thin active layers by integration of (dual) cell structures

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The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell

Cited by 16 publications

References 23 publications

Analysis of Active Layer Thickness on Thin Layer Solar Cell Performance

Analysis of Active Layer Thickness on Thin Layer Solar Cell Performance

Analysis of ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/Al HIT (Heterostructure with Intrinsic Thin Layer) solar cell performances.

Ultrathin Film Amorphous Silicon Solar Cell Performance using Rigorous Coupled Wave Analysis Method

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