The effects of hydrogen in stabilizing the electrical properties of n-Pb0.8Sn0.2Te thin films

Dawar, A. L.; Kumar, Pramod; Paradkar, S.K.; Sachar, B.K.

doi:10.1016/0020-0891(83)90061-1

Cited by 3 publications

(2 citation statements)

References 17 publications

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“…If, however, the hydrogen source contains atomic hydrogen, then the defect formation energy is negative (for example, it is ≈ – 1.1 eV for the neutral system at the PBE level of theory), i.e., hydrogen adsorption is favorable. These results are consistent with early experiments on bulk lead chalcogenides, which reported efficient doping of the solid when exposed to an atomic hydrogen atmosphere. − In some of these experiments, atomic hydrogen was generated by converting H 2 to H using an electrically heated filament …”

Section: Resultssupporting

confidence: 88%

“…For example, dangling bonds are known to be the natural cause of trap states in silicon NPs, ,, and they may be well-passivated by hydrogen atoms. , The latter are not only used as passivants. In ionic bulk semiconductors, atomic hydrogen dopants have been known to counteract the prevailing doping; for example, hydrogen neutralizes Mg acceptors in GaN. − Sometimes, hydrogen can enhance the conductivity of ionic compounds. − Indeed, early studies of bulk Pb chalcogenides showed that exposure of their surfaces to a hydrogen atmosphere turned p-type films into n-type ones. − …”

Section: Introductionmentioning

confidence: 99%

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Hydrogen Treatment as a Detergent of Electronic Trap States in Lead Chalcogenide Nanoparticles

2016

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Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial for charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Our findings suggest that postsynthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films.

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Hydrogen Treatment as a Detergent of Electronic Trap States in Lead Chalcogenide Nanoparticles

2016

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Effect of hydrogen on the electrical properties of CdTe thin films

Dawar

Ferdinand

Jagadish

et al. 1984

Materials Chemistry and Physics

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Electrical properties of Te-rich, Cd-rich and hydrogen-exposed polycrystalline CdTe thin films

Dawar

Ferdinand

Jagdish

et al. 1983

J. Phys. D: Appl. Phys.

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Polycrystalline films of CdTe, stoichiometric, Te-rich, and Cd-rich, were grown using a vacuum evaporation technique on glass substrates kept at room temperature. The as-grown films were exposed to hydrogen gas at high pressure (200-500 PSI). Measurements of DC conductivity in the temperature range 77-300K, X-ray diffraction studies and electron probe microanalyses were made on these films. The conductivity data for the stoichiometric, Te-rich and Cd-rich films in the low temperature region have been analysed for variable range hopping conduction on the basis of Mott's model. The analysis of the high temperature conductivity data for Te-rich and hydrogen-exposed films has been based on Seto's model of thermionic emission. It is found that addition of Te and Cd improves the conductivity of the films by four and six orders of magnitude respectively. However, the density of trap states near the Fermi level, N(EF), also increases with increase of Cd and Te content. In the case of hydrogen-exposed films the conductivity decreases with increase of gas pressure.

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The effects of hydrogen in stabilizing the electrical properties of n-Pb0.8Sn0.2Te thin films

Cited by 3 publications

References 17 publications

Hydrogen Treatment as a Detergent of Electronic Trap States in Lead Chalcogenide Nanoparticles

Hydrogen Treatment as a Detergent of Electronic Trap States in Lead Chalcogenide Nanoparticles

Effect of hydrogen on the electrical properties of CdTe thin films

Electrical properties of Te-rich, Cd-rich and hydrogen-exposed polycrystalline CdTe thin films

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