The Electrical and Compositional Properties of AlN ‐ Si Interfaces

Ahmed, Akhter U.; Rys, A.; Singh, Nitin Kumar; Edgar, James H.; Yu, Zhonghai

doi:10.1149/1.2069355

Cited by 18 publications

(7 citation statements)

References 17 publications

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“…Both coadsorption and separated reactions of trimethylaluminum (TMA, Al(CH 3 ) 3 ) and ammonia (NH 3 ) have been used for low-temperature (<800 K) deposition of aluminum nitride (AlN) thin films. − Accurate control of the film thickness is achieved by atomic layer chemical vapor deposition 5 (ALCVD, also called atomic layer epitaxy, ALE), a technique , based on saturating gas−solid reactions. Residual carbon and hydrogen have been found in the films, most likely due to incomplete reaction of the ammonia, which lowers the film quality.…”

Section: Introductionmentioning

confidence: 99%

IR and NMR Study of the Chemisorption of Ammonia on Trimethylaluminum-Modified Silica

et al. 2000

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The saturating reaction of ammonia was studied on trimethylaluminum (TMA)-modified porous silica. This reaction step completes a reaction cycle of TMA and ammonia in aluminum nitride growth by atomic layer chemical vapor deposition (ALCVD), a technique based on well-separated saturating gas-solid reactions. The reaction was studied from 423 to 823 K. In addition, the separate reactions of TMA at 423 K and ammonia at 823 K were studied on silica dehydroxylated at 1023 K. The reaction products on the surface were identified by IR and 29 Si, 13 C, and 1 H NMR spectroscopy, and they were quantified by element determinations and 1 H NMR. In the reaction of TMA on silica, methyl groups were attached to the surface indirectly through aluminum and through direct bonding to silicon. In the subsequent ammonia reaction, ligand exchange of ammonia with the methyl groups occurred at all reaction temperatures, resulting in primary amino groups and the release of methane. Also, secondary amino groups were found on the surface, and quantitative determinations indicated the presence of tertiary amino groups, especially at high reaction temperatures. In addition, especially at low reaction temperatures, ammonia chemisorbed associatively on the TMA-modified silica. All of the methyl groups bonded to aluminum were removed with ammonia at 573-623 K, and about 80% of the methyl groups bonded to silicon were removed at 823 K; amino groups bonded to both aluminum and silicon were left behind. The higher the reaction temperature, the smaller was the average number of hydrogen atoms (x) in the amino groups (NH x ).

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Section: Introductionmentioning

confidence: 99%

IR and NMR Study of the Chemisorption of Ammonia on Trimethylaluminum-Modified Silica

et al. 2000

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“…It is important to note that the crystallinity and stochiometry of the initial layer of the AlN film also plays a significant role in the creation of defects. 18 The transmission spectra of the AlN/SiO 2 (1?5 mm)/Si sample was recorded by an FTIR spectrophotometer (Fig. 2).…”

Section: Resultsmentioning

confidence: 99%

“…Here, the few bottom layers may loose their orientation by the incorporation of oxygen from the SiO 2 /Si substrate, which may be one of the reasons for less c-axis oriented films on the SiO 2 /Si substrate. It is important to note that the crystallinity and stochiometry of the initial layer of the AlN film also plays a significant role in the creation of defects 18. The transmission spectra of the AlN/SiO 2 (1?5 mm)/Si sample was recorded by an FTIR spectrophotometer (Fig.2).…”

mentioning

confidence: 99%

Morphological investigation of aluminium nitride films on various substrates for MEMS applications

Kar

Bose

Tuli

et al. 2009

Surface Engineering

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Piezoelectric films, such as aluminium nitride (AlN), are of great interest for the fabrication of thin film bulk/surface acoustic resonators, where the growth parameters and the substrate material influence the morphological properties. Herein, AlN films were deposited using RF reactive sputtering on Si, SiO 2 , metal (Al, Cu, Cr and Au) coated silicon, GaAs and InP substrates. C-axis (002) oriented AlN films were observed on most of the substrates, where the surface morphologies of the films grown on the 1?5 mm thick SiO 2 layer and GaAs substrate were found to be non-uniform. Moreover, AlN films deposited on the Cr electrode exhibit well textured film with fairly uniform grains, while the films deposited on other metal electrodes exhibit a granular type of structure with mixed small and large grains. After optimisation of growth parameters, silicon micromachining was performed by the wet chemical etching method. Suspended Cr-AlN-Cr-SiO 2 cantilevers of 20 mm in width were fabricated for futuristic microelectromechanical systems (MEMS) applications.

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“…AlN films, grown on GaAs substrates, forms bump like structures (Kar et al, 2009), which may be due to thermal and/or lattice mismatch. It is important to note that the crystallinity and stochiometry of the initial layer of AlN film also plays a significant role in the creation of defects and mismatches (Ahmed et al, 1992). Crystal orientation of AlN films is also a strong function of the bottom metal electrodes.…”

Section: Growth Of Aln Films On Different Substratesmentioning

confidence: 99%

Aluminum Nitride (AlN) Film Based Acoustic Devices: Material Synthesis and Device Fabrication

Kar¹,

Bose²

2011

Acoustic Waves - From Microdevices to Helioseismology

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The Electrical and Compositional Properties of AlN ‐ Si Interfaces

Cited by 18 publications

References 17 publications

IR and NMR Study of the Chemisorption of Ammonia on Trimethylaluminum-Modified Silica

IR and NMR Study of the Chemisorption of Ammonia on Trimethylaluminum-Modified Silica

Morphological investigation of aluminium nitride films on various substrates for MEMS applications

Aluminum Nitride (AlN) Film Based Acoustic Devices: Material Synthesis and Device Fabrication

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