The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

Carrier transport mechanisms and photodetector characteristics of Ag/TiOPc/p-Si/Al hybrid heterojunction

“…They assumed that most of the applied voltage was dropped across a Schottky depletion region of thickness d s , while assuming the theoretical value of β s in Eq. (9).…”

“…In earlier reports, it has been shown that organic and inorganic hybrid combination has complementary advantages, such as high carrier mobility and wide absorption spectrum from the inorganic side, and low temperature solution processability and low cost processability from the organic side [4,5]. Till now, most organic-inorganic hybrid structured devices were demonstrated on rigid substrates [6][7][8][9], since most inorganic materials typically need a rigid platform for their deposition or growth [1].…”

Fabrication and conduction mechanism evaluation of polyfluorene polymeric Schottky diode

“…The value of series resistance of SD device is an important factor and also leads to a higher value of n . The series resistance of the device has been determined from the current function presented in eqn as follows: …”

Perylene diimide: Synthesis, fabrication and temperature dependent electrical characterization of heterojunction with p-silicon

“…(2), A is the effective diode area, A n ¼ 4πm n k 2 /h 3 is the effective Richardson constant and equals to 32 A cm −2 K −2 for p-Si, m n ¼ 0.16m 0 [42,43] is the effective mass for holes perpendicular to the layer plane, ϕ b is the apparent barrier height and n is the ideality factor. From Eq.…”

“…This, actually, confirms Cheungs' approach [49] on the N-BuHHPDI/p-Si heterojunction. Furthermore, for the case of high series resistance present in diode, Norde introduced an another technique to evaluate barrier height and series resistance using the following function [43,50,51]:…”