The electrical properties of planar n+−p junctions in InAs produced by S+ ion implantation

Герасименко, Н. Н.; Kuryshev, G. L.; Myasnikov, A. M.; Obodnikov, V.I.; Safronov, L. N.; Khryashchev, G.S.

doi:10.1016/0168-583x(91)95585-2

Cited by 5 publications

(1 citation statement)

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“…Specifically, the stoichiometry can be altered and difficult to recover from implantation induced crystal damage. [6][7][8] The residual damage can lead to higher junction leakage and lower dopant activation in compound semiconductors. 9 Recently, we developed a controllable, nanoscale doping approach for Si substrates by the utilization of molecular monolayers to achieve sub-5-nm ultrashallow junctions ͑USJs͒.…”

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confidence: 99%

Nanoscale doping of InAs via sulfur monolayers

Ford

Chueh

et al. 2009

Applied Physics Letters

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One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of ϳ3.5 nm/decade is observed without significant defect density. The n + / p + junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of ϳ8 ϫ 10 18 cm −3 .

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confidence: 99%