The Energy-Driven Hot Carrier Degradation Modes

Guérin, C.; Huard, V.; Bravaix, A.

doi:10.1109/relphy.2007.369573

Cited by 11 publications

(6 citation statements)

References 7 publications

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“…In particular, the AI is represented by some empirical factors that depend on the operation condition linked to the drain current. This simplified treatment of carrier transport is in the spirit of the energy driven paradigm, where the bond dissociation rates are modeled using the knee energy concept [9], [10], [24], [25]. The combination 0018-9383 © 2014 IEEE.…”

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confidence: 99%

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Bina

Tyaginov

Franco

et al. 2014

IEEE Trans. Electron Devices

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We present a physics-based hot-carrier degradation (HCD) model and validate it against measurement data on SiON n-channel MOSFETs of various channel lengths, from ultrascaled to long-channel transistors. The HCD model is capable of representing HCD in all these transistors stressed under different conditions using a unique set of model parameters. The degradation is modeled as a dissociation of Si-H bonds induced by two competing processes. It can be triggered by solitary highly energetical charge carriers or by excitation of multiple vibrational modes of the bond. In addition, we show that the influence of electron-electron scattering (EES), the dipolefield interaction, and the dispersion of the Si-H bond energy are crucial for understanding and modeling HCD. All model ingredients are considered on the basis of a deterministic Boltzmann transport equation solver, which serves as the transport kernel of a physics-based HCD model. Using this model, we analyze the role of each ingredient and show that EES may only be neglected in long-channel transistors, but is essential in ultrascaled devices.

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confidence: 99%

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Bina

Tyaginov

Franco

et al. 2014

IEEE Trans. Electron Devices

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“…For instance, the SP-ans MP-mechanisms are competing pathways of the same bond dissociation reaction and need to be considered self-consistently. However, for the sake of simplicity in some HCD models these processes are treated as being independent [23][24][25][26][27]. The rates of these processes are affected by the scattering mechanisms with corresponding rates determined by the MOSFET configuration and applied voltages.…”

Section: Introductionmentioning

confidence: 99%

“…In scaled devices electron-electron scattering (EES) plays a significant role and impacts the kinetics of defect generation [28,29]. However, in early versions of one of the most successful HCD models developed by the Bravaix group, three HCD modes, namely driven by the SP-process, by EES, and by the MP-mechanisms are distinguished and considered independently [23,24,30].…”

Section: Introductionmentioning

confidence: 99%

Modeling of hot-carrier degradation based on thorough carrier transport treatment

Tyaginov

Wimmer²

2014

FACTA U EE

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We present and validate a physics-based model for hot-carrier degradation. The model is based on a thorough carrier transport treatment by means of an exact solution of the Boltzmann transport equation. Such important ingredients relevant for hot-carrier degradation as the competing mechanisms of bond dissociation, electron-electron scattering, the activation energy reduction due to the interaction of the dipole moment of the bond with the electric field as well as statistical fluctuations of this energy are incorporated in our approach. The model is validated in order to represent the linear drain current change in three different devices subjected to hot-carrier stress under different conditions. The main demand is that the model has to use a unique set of parameters. We analyze the importance of all the model ingredients, especially the role of electron-electron scattering. We check the idea that the channel/gate length of the device alone is not enough to judge whether electron-electron scattering is important or not and instead a combination of the device topology and stress conditions needs to be used.

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“…The e-e scattering mechanism is used to interpret the new trend [2] . Stewart E. Rauch and co-workers proposed an energy-driven model (EDM) which considers the energy as the driving force and gives a framework of HCI models over a large range of voltage stress [3,4] .…”

Section: Introductionmentioning

confidence: 99%

The Failure Mechanism Worst Stress Condition for Hot Carrier Injection of NMOS

Song¹,

Chen²,

Yong³

et al. 2013

ECS Trans.

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Various voltage bias and temperature stress conditions are adopted for hot carrier injection (HCI) test by not only the different device type (N or PMOS) but also the different technology with various device feature sizes (such as W/L=10/0.28µm and 10/0.1µm). Due to different dominant mechanism for hot carrier generation and performance degradation corresponding to various devices, the appropriate stress condition selection is crucial to address the HCI lifetime for device. Based on the conditions that may occur in real application and according to the experimental data, this work discussed the worst stress condition including the voltage and temperature for NMOS device with specific device feature size. Theoretical explanation is presented for each case. An HCI stress condition guideline is summarized in the end.

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The Energy-Driven Hot Carrier Degradation Modes

Cited by 11 publications

References 7 publications

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Modeling of hot-carrier degradation based on thorough carrier transport treatment

The Failure Mechanism Worst Stress Condition for Hot Carrier Injection of NMOS

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