The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

Abstract

We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used.

Uncovering the carrier dynamics of AlInGaN semiconductors using time-resolved cathodoluminescence

“…Stacking faults are two-dimensional defects which exist because of a partial displacement that affects the regular lattice stacking sequence. In wz III-nitrides, stacking faults that lie along the basal (0001) planes are basal stacking faults while those that lie along the prismatic planes such as (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) are prismatic stacking faults.…”

“…Importantly, by replacing traditional lighting sources, the power-saving nature of InGaN-based white LEDs can not only reduce global carbon emissions, helping to fight climate change, but can also allow people in remote areas access to ambient lighting [12,13]. Apart from LEDs, InGaN has also been crucial in the advancement of other optoelectronic technology including laser diodes (LDs), photovoltaics and photodetectors [14][15][16].…”

Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells

“…So MQWs is hard to be used in light-toelectric devices due to the low escape rate. But relevant experiments demonstrated an obvious carriers escape phenomenon in PIN structure (an intrinsic layer sandwiched in the p-type and n-type layer) with MQWs [10][11][12][13][14][15], where the carriers break the quantum confinement and the escape proportion can be up to 90 percent, which is too high to be explained by thermal-electron emission and tunneling theory [5,19,20]. These results implies that the MQWs in PIN structure could be used in light-to-electric devices, such as solar cells [16,17] and photodetectors [10,18].…”

Fabrication and Characterization of Dual Functional InGaN LED Arrays as the Optical Transmitter and Receiver for Optical Wireless Communications

“…al. reported that p-i-n InGaN/GaN MQW LEDs that behave like photodiodes (PDs) under light illumination due to presence of an electrical field at the pn junction facilitates the extraction of photogenerated carriers from MQWs [13]. With the monolithic p-i-n PD and LED, a warning system has been proposed for UV light detection [14].…”