2010
DOI: 10.1088/0957-4484/21/14/145301
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The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

Abstract: Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10(13) ions cm(- 2) has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx. 50 nm, surface layer is found to be durable enough to serve as a mask with a high selectiv… Show more

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Cited by 58 publications
(35 citation statements)
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“…Significant effort has been devoted to investigating methods for defining functional 3D micro/nanoscale structures, including direct material deposition, [7][8][9][10] nanotransfer printing, [11][12][13] inkjet printing, [14] optical lithography, [15][16][17][18] self-assembly, [19] and charged-particle beam lithography. [23] Electron beam lithography (EBL), a prevalent [23] Electron beam lithography (EBL), a prevalent…”
Section: Helium Ion Beam Lithographymentioning
confidence: 99%
See 1 more Smart Citation
“…Significant effort has been devoted to investigating methods for defining functional 3D micro/nanoscale structures, including direct material deposition, [7][8][9][10] nanotransfer printing, [11][12][13] inkjet printing, [14] optical lithography, [15][16][17][18] self-assembly, [19] and charged-particle beam lithography. [23] Electron beam lithography (EBL), a prevalent [23] Electron beam lithography (EBL), a prevalent…”
Section: Helium Ion Beam Lithographymentioning
confidence: 99%
“…[39,40] When used as a high-resolution lithography tool, helium ion beam lithography (HIBL) has achieved record-high-resolution patterning of 8 nm pitch dense lines. [23] Electron beam lithography (EBL), a prevalent In particular, a throughmembrane exposure method is developed to make visible and subsequently to measure the 3D interaction volume and energy deposition of helium ions in HSQ.…”
mentioning
confidence: 99%
“…All anisotropic etchants of Si are aqueous, alkaline solutions, whereas the main component can be either organic, e.g., in TMAH, (CH 3 ) 4 NOH [61], NH 2 (CH 2 ) 2 NH 2 or CH 6 H 4 (OH) 2 [62], or inorganic, e.g., in KOH or NaOH [63][64][65]. In general, Fig.…”
Section: Dependence On the Si Crystal Planesmentioning
confidence: 99%
“…17 The process consists of cycles of chemical vapor deposition of an Si layer and local ion implantation into the layer by focused ion beam (FIB) writing, and is finished off with a final etch to form the 3D Si structures defined by the implantation. This process makes use of the high etch selectivity that can be achieved in semiconductor materials by local ion implantation, [18][19][20][21][22][23][24][25][26][27][28] thereby forming patterns in the material with lateral dimensions of down to 20 nm. 25 The proposed implementation of the layer-by-layer fabrication process is schematically illustrated in Fig.…”
Section: Introductionmentioning
confidence: 99%