The first full-field EUV masks ready for printing

Mickan, Uwe; Groeneveld, Rogier; Demarteau, M.; Peters, Jan Hendrik; Dersch, U.; Hess, Guenter; Seitz, H.

doi:10.1117/12.692629

Cited by 4 publications

(2 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The blanks are made of Low Thermal Expansion Material (LTEM) to ensure geometrical stability over time and are polished to a high flatness and low local slope angles, minimizing overlay errors [11]. It has been recently shown [12] that a substrate flatness of <50 nm over the full 120 142 mm 2 qualification area can be reached, which will lead to an overlay error contribution <1nm.…”

Section: Blanksmentioning

confidence: 99%

First performance results of the ASML alpha demo tool

et al. 2006

Self Cite

View full text Add to dashboard Cite

The ASML EUV alpha demo tool is operational! The alpha demo tool is a 0.25NA fully functional lithography tool with a field size of 26 33 mm 2 , enabling process development at the 40-nm technology node. In this paper we describe the tool performance, show that vacuum is achieved in a few hours, and demonstrate that our optics contamination strategy mitigates degradation of the optics. Additional data shows the Sn source cost-of-ownership to be comparable to state-of-the-art ArF source systems, by implementing a collector contamination mitigation strategy that includes cleaning. And, we present our first 35-nm dense lines and spaces (half pitch) resist images.

show abstract

Section: Blanksmentioning

confidence: 99%

First performance results of the ASML alpha demo tool

et al. 2006

Self Cite

View full text Add to dashboard Cite

show abstract

“…reviews the details of the material stack on EUV blanks as published by three blank vendors4,13,14 .…”

mentioning

confidence: 99%

Assessment of EUV reticle blank availability enabling the use of EUV tools today and in the future

Jonckheere

Lorusso

Goethals

et al. 2007

23rd European Mask and Lithography Conference

View full text Add to dashboard Cite

With first full-field exposure tools for extreme ultraviolet lithography (EUVL) materializing, the present paper intends to review the status of the EUV mask infrastructure to assure timely availability of reticles, first for the alpha demo tool (ADT), but also in preparation for future use of EUV lithography in production. First, the major requirements such as low thermal expansion substrates, multilayer reflectivity control, flatness requirements and absorber related requirements are reviewed and motivated. In a second part the status of the infrastructure is reviewed, and it is shown that both for mask blank suppliers and mask shops full-field EUV reticles bring new challenges. Because the mask blank infrastructure is critical to the success of EUV lithography, IMEC has addressed blanks vendors (together with ASML) and mask shops, to get first feedback on the challenges recognized for production tool masks, exploring key parameters that impact overlay and imaging. IMEC has prepared to obtain reticles with an identical layout from multiple mask shops. The present paper gives a snapshot of the available EUV mask infrastructure, with a focus on blank related aspects, in an anonymous way. It is a report of work in progress. Figure 1: Photograph of the ADT installed in the IMEC cleanroom. The tool is interfaced with a TEL ACT12 track, as shown in front of the ADT.

show abstract

EUV lithography

Kemp¹,

Wurm²

2006

Comptes Rendus. Physique

View full text Add to dashboard Cite

The first full-field EUV masks ready for printing

Cited by 4 publications

References 5 publications

First performance results of the ASML alpha demo tool

First performance results of the ASML alpha demo tool

Assessment of EUV reticle blank availability enabling the use of EUV tools today and in the future

EUV lithography

Contact Info

Product

Resources

About