The formation of narrow nanocluster bands in Ge-implanted SiO2-layers

Borany, J. von; Grötzschel, R.; Heinig, Karl-Heinz; Markwitz, A.; Schmidt, Bruno E.; Skorupa, W.; Thees, H.-J.

doi:10.1016/s0038-1101(99)00040-4

Cited by 41 publications

(19 citation statements)

References 11 publications

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“…Light emission from Ge nanocrystals embedded in SiO 2 matrix is becoming an expanding field of interest [42] because of their potential use i. as optoelectronic emission devices directly coupled with Si integrated circuits [43] and ii in memory device applications [44]. A lot of effort is being made in order to improve the performance of these devices.…”

Section: A Zero Dimensional Systemmentioning

confidence: 99%

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

Singha

Dhar

Roy

2005

American Journal of Physics

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Modern materials science requires efficient processing and characterization techniques for low dimensional systems. Raman spectroscopy is an important non-destructive tool, which provides enormous information on these materials. This understanding is not only interesting in its own right from a physicist's point of view, but can also be of considerable importance in optoelectronics and device applications of these materials in nanotechnology. The commercial Raman spectrometers are quite expensive. In this article, we have presented a relatively less expensive set-up with homebuilt collection optics attachment. The details of the instrumentation have been described. Studies on four classes of nanostructures -Ge nanoparticles, porous silicon (nanowire), carbon nanotubes and 2D InGaAs quantum layers, demonstrate that this unit can be of use in teaching and research on nanomaterials.

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Section: A Zero Dimensional Systemmentioning

confidence: 99%

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

Singha

Dhar

Roy

2005

American Journal of Physics

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“…7 Depending on the conditions during post-implantation annealing (temperature, time, atmosphere), a redistribution of implanted Ge atoms has been observed. 1,2,4 This redistribution of Ge is strongly connected with its precipitation. 1,4 Different analytical techniques have been applied to study precipitation and Ostwald ripening, as well as chemical reactions, during post-implantation annealing.…”

Section: Introductionmentioning

confidence: 95%

“…Ion beam synthesis of elemental Ge and Si nanoclusters in SiO 2 has been studied 1 -6 to look for possible future applications because of their charge storage capabilities 2,3 (for non-volatile memory devices) and their luminescence 5 (for optoelectronics devices). With ion implantation, the concentration and depth distribution of impurities, as well as the nanocluster size distribution, can be controlled over a wide range by dose, energy and temperature variation.…”

Section: Introductionmentioning

confidence: 99%

“…Rutherford backscattering spectroscopy (RBS) gives the depth distribution of the implanted material in the samples. 1,2,4,6 Details on the microstructure of the precipitated impurities can be obtained by cross-section transmission electron microscopy (XTEM). 1,4,7 For SiO 2 layers studied by RBS after annealing in N 2 , a redistribution of as-implanted Ge depth profiles into three well-separated peaks has been found recently.…”

Section: Introductionmentioning

confidence: 99%

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XPS investigation with factor analysis for the study of Ge clustering in SiO2

Oswald

Schmidt

Heinig

2000

Surf. Interface Anal.

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“…Ion beam synthesis of Ge nanoclusters in SiO 2 is studied with respect to new electronic or optical applications as charge storage or luminescence [1][2][3]. In the past we therefore extensively have investigated such Ge nanoclusters prepared by high-energy implantation (some 100 keV).…”

Section: Introductionmentioning

confidence: 99%

Influence of sputtering conditions and electron energy on XPS depth profiling of Ge in SiO₂

Oswald¹,

Schmidt

Heinig

2005

Cryst. Res. Technol.

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Ge nanocluster formation in SiO 2 is of growing interest for new electronic applications. Ion beam synthesis using high-energy Ge implantation connected with thermal annealing is one possible preparation method of such clusters. In addition to investigations of electrical and structural changes during the cluster formation process we also studied chemical changes in the samples using x-ray photoelectron spectroscopy (XPS). This was done with low-energy noble gas ion sputtering for depth profiling. Binding state information one can get from the XPS data by means of factor analysis (FA) in combination with other structural investigations. However, mixed bonding states probably created by ion beam damage during sputter erosion are dominating the results. It is shown, that by changing the experimental conditions (ion beam impact depth during sputtering, electron information depth during XPS measurement) these mixed states are influenced in an appropriate manner. It is concluded that useful chemical information on the behavior of the implanted Ge can be derived despite of the ion beam damage.

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The formation of narrow nanocluster bands in Ge-implanted SiO2-layers

Cited by 41 publications

References 11 publications

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

XPS investigation with factor analysis for the study of Ge clustering in SiO2

Influence of sputtering conditions and electron energy on XPS depth profiling of Ge in SiO₂

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The formation of narrow nanocluster bands in Ge-implanted SiO2-layers

Cited by 41 publications

References 11 publications

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

XPS investigation with factor analysis for the study of Ge clustering in SiO2

Influence of sputtering conditions and electron energy on XPS depth profiling of Ge in SiO2

Contact Info

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Influence of sputtering conditions and electron energy on XPS depth profiling of Ge in SiO₂