The formation of radiation damage in GaN during successive bombardment by light ions of various energies

Titov, A.I.; Karaseov, P. A.; Karabeshkin, K. V.; Struchkov, Andrei I.

doi:10.1016/j.vacuum.2019.109149

Cited by 6 publications

(4 citation statements)

References 28 publications

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“…An additional argument in favor of this model is a non-commutative damage accumulation in GaN that was experimentally observed recently for F ions [22].…”

Section: Introductionmentioning

confidence: 80%

“…Note that the latter model explains not only the damage saturation in GaN bulk but also a shift of the bulk disorder maximum position with increasing ion dose. An additional argument in favor of this model is a non-commutative damage accumulation in GaN that was experimentally observed recently for F ions [22]. However, various chemical effects of implanted ions can play a role in damage formation in GaN which were not taken into account in the models proposed.…”

Section: Ionmentioning

confidence: 97%

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Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Titov¹,

Karabeshkin²,

Struchkov³

et al. 2022

J. Phys. D: Appl. Phys.

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Realization of radiation-hard electronic devices able to work in harsh environments requires deep understanding the processes of defect formation/evolution occurring in semiconductors bombarded by energetic particles. In the present work we address such intriguing radiation phenomenon as high radiation tolerance of GaN and analyze structural disorder employing advanced co-irradiation schemes where low and high energy implants with different ions have been used. Channeling analysis revealed that the interplay between radiation-stimulated defect annealing and defect stabilization by implanted atoms dominates defect formation in the crystal bulk. Furthermore, the balance between these two processes depends on implanted species. In particular, strong damage enhancement leading to the complete GaN bulk amorphization observed for the samples pre-implanted with fluorine ions, whereas the co-irradiation of the samples pre-implanted with such elements as neon, phosphorus, and argon ions leads to a decrease of the damage.

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“…An additional argument in favor of this model is a non-commutative damage accumulation in GaN that was experimentally observed recently for F ions [22].…”

Section: Introductionmentioning

confidence: 80%

Section: Ionmentioning

confidence: 97%

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Titov¹,

Karabeshkin²,

Struchkov³

et al. 2022

J. Phys. D: Appl. Phys.

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“…Thus, the number of point defects available to form stable damage decreases and the maximum of their distribution shifts deeper to the bulk. This leads to the apparent shift of BDP position deeper to the crystal bulk and eventually to its saturation since the number of point defects needed to promote its further growth [32] decreases. However, this mechanism could not be the case of β-Ga2O3 since practically no shift of the BDP position is observed in this material.…”

Section: Discussionmentioning

confidence: 99%

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Titov

Karabeshkin

Struchkov

et al. 2022

Vacuum

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“…The damage accumulation processes during ion irradiation in In x Ga 1−x N are quite complex and depend on the implantation conditions; for example, the irradiation ion energy and species [35,[48][49][50]. Different ions or the same ions with different energies may produce different recoil energy spectra.…”

Section: Discussionmentioning

confidence: 99%

Defect agglomeration induces a reduction in radiation damage resistance of In-rich In_xGa_1−xN

Zhang¹,

Wang²,

Zhang³

et al. 2021

J. Phys. D: Appl. Phys.

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To investigate the reason for the reduction in damage resistance of In x Ga1−x N with increasing indium (In) content, we used molecular dynamics methods to simulate the threshold displacement energies, the individual recoil damage and the overlapping cascade processes in In x Ga1−x N (x = 0.3, 0.5, 0.7) during ion implantation. The average threshold displacement energy of In x Ga1−x N decreases a little (from 41.0 eV to 34.6 eV) as the In content increases (from 0.3 to 0.7) and the number of defects produced by individual cascades increases less than 30% with increasing In content (from 0.3 to 0.7), while the overlapping cascade simulations showed that with In content increasing the dynamic annealing processes in cascades were significantly suppressed. Thus, the suppression of dynamic annealing in the cascades is the main reason for the reduction of damage resistance of In x Ga1−x N by adding In content. The analysis of defect distribution during overlapping cascades showed that defects in In-rich In x Ga1−x N (x = 0.7) agglomerate more rapidly as the irradiation dose increases and are likely to form large clusters, which are harder to anneal during cascade evolution. Therefore, the suppression of dynamic annealing in In-rich In x Ga1−x N can be attributed to the rapid agglomeration of defects with the irradiation dose.

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The formation of radiation damage in GaN during successive bombardment by light ions of various energies

Cited by 6 publications

References 28 publications

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Defect agglomeration induces a reduction in radiation damage resistance of In-rich In_xGa_1−xN

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The formation of radiation damage in GaN during successive bombardment by light ions of various energies

Cited by 6 publications

References 28 publications

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Defect agglomeration induces a reduction in radiation damage resistance of In-rich In x Ga1−x N

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Defect agglomeration induces a reduction in radiation damage resistance of In-rich In_xGa_1−xN