The future of EUV lithography: continuing Moore's Law into the next decade

Schoot, Jan van; Troost, Kars; Bornebroek, Frank; Ballegoij, Rob van; Lok, Sjoerd; Krabbendam, Peter; Stoeldraijer, Judon; Benschop, Jos; Finders, Jo; Meiling, H.; Setten, Eelco van; Kneer, Bernhard; Kuerz, Peter; Kaiser, Winfried; Heil, Tilmann; Migura, Sascha

doi:10.1117/12.2295800

Cited by 7 publications

(4 citation statements)

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“…Spectroscopic investigations were performed for plasmas driven by this 2 µm wavelength pulsed laser light and comparisons were made with plasmas driven by the 1 µm pump laser light at several laser intensities. Very similar EUV spectra, and thus underlying plasma ionicities, were obtained when the intensity ratio was kept fixed at I 1 µm /I 2 µm = 2.4 (7). Crucially, the CE was found to be a factor of two larger (at the given 60 degree observation angle) for the 2 µm laserdriven plasma compared to the case of the denser, 1 µm driven plasma.…”

Section: Comparing Plasmas Driven By 1 and 2 µM Wavelength Laserssupporting

confidence: 52%

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Microdroplet-tin plasma sources of EUV radiation driven by solid-state-lasers (Topical Review)

Versolato

Sheil

Witte

et al. 2022

J. Opt.

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Plasma produced from molten-tin microdroplets generates extreme ultraviolet light for state-of-the-art nanolithography. Currently, CO2 lasers are used to drive the plasma. In the future, solid-state mid-infrared lasers may instead be used to eﬃciently pump the plasma. Such laser systems have promise to be more compact, better scalable, and have higher wall-plug eﬃciency. In this Topical Review, we present recent ﬁndings at the Advanced Research Center for Nanolithography (ARCNL) on using 1- and 2-µm-wavelength solid-state lasers for tin target preparation and for driving hot and dense plasma. The ARCNL research ranges from advanced laser development, over studies of ﬂuid dynamic response of droplets to impact, radiation-hydrodynamics calculations of, e.g., ion “debris”, (EUV) spectroscopic studies of tin laser-produced-plasma, to high-conversion eﬃciency operation of 2-µm-wavelength driven plasma.

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Section: Comparing Plasmas Driven By 1 and 2 µM Wavelength Laserssupporting

confidence: 52%

“…The production of any semiconductor device is a repetitive opto-chemical process. Photolithography is a key step in this device manufacturing [6,7]. It is a photochemical process in which a thin layer of material, a photoresist, is exposed to light.…”

Section: Introductionmentioning

confidence: 99%

Microdroplet-tin plasma sources of EUV radiation driven by solid-state-lasers (Topical Review)

Versolato

Sheil

Witte

et al. 2022

J. Opt.

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“…The ASML Deep Ultraviolet (DUV) and EUV scanner road map illustrates the upcoming tool and respective Overlay Optimizer (OVO) performance improvement packages 3 . Each tool has unique optics and does not share the same correction capability.…”

Section: Simulating Image Placement Error and Overlay Measurementmentioning

confidence: 99%

Impact of high-NA half-field to full-field overlay performance by Monte Carlo simulations

Lallement¹,

Schmidt

Johnson

et al. 2023

Optical and EUV Nanolithography XXXVI

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In an earlier publication, we evaluated simulation methods to explore overlay performance implications when a highNumerical Aperture (high-NA) Extreme Ultra Violet (EUV) exposure is mixed and matched with a 0.33NA EUV full field exposure. The present contribution goes beyond the method description and aims to quantify the overlay performance impact in such a mix and match case, giving insight into the influence of different sets of overlay corrections. To this aim, the Mont Carlo engine has been updated to accommodate overlay corrections with up to 57 parameters. Since high-NA EUV is not yet available, typical overlay correction terms from IBM’s 0.33NA EUV tool have been used to approximate a realistic image placement error fingerprint for our simulations. As a result, we demonstrate the benefit of various overlay correction sets, and the detrimental effect when using different masks for top and bottom half fields. Such information can also help to infer design layout placement decisions to avoid hot spot regions.

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“…Optical coatings working in extreme ultraviolet (EUV) and far ultraviolet (FUV) wavelength range are applied widely for applications such as material analysis, 1,2 plasma diagnostics, 3,4 microscopic imaging, 5,6 EUV lithography, 7,8 and astrophysics. [9][10][11] Among all the applications, astrophysics is of the particular interest of this research.…”

Section: Introductionmentioning

confidence: 99%

Laboratory-based reflectometer using line spectra of an RF-induced gas-discharge lamp in 30- to 200-nm wavelength range

Jiang

et al. 2022

J. Astron. Telesc. Instrum. Syst.

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A laboratory-based reflectometer designed for characterizing the reflectivity of optical coatings in 30-to 200-nm wavelength range was recently developed at IPOE. An RF-produced gas-discharge light source is applied to generate characteristic lines. The light source is mounted on a grazing incident monochromator with a 146-deg deviation angle between the incident and diffracted arms. By precisely adjusting the toroidal grating inside the monochromator chamber, monochromatic lights are acquired through the exit slit. A collimator mirror and two sets of collimation slits with 2 mm × 2 mm dimension are utilized for reducing the divergence of the beam incident on the sample. A high-precision six-axis translation stage, which allows a heavy sample with a maximum diameter of 100 mm, is used to control positions of the samples and the detector. A chopper disk used both for incident light intensity monitor and signal modulation is placed with an incidence angle of 70 deg relative to the incident light beam. The configuration, adjustment process, and test results of the reflectometer are presented in detail. The experimental reflectivity results for Al∕LiF∕MgF 2 film obtained from our laboratory and BESSY-II Synchrotron as well as Hefei Synchrotron Light Source are given and compared for demonstrating the reliability of the system.

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The future of EUV lithography: continuing Moore's Law into the next decade

Cited by 7 publications

References 0 publications

Microdroplet-tin plasma sources of EUV radiation driven by solid-state-lasers (Topical Review)

Microdroplet-tin plasma sources of EUV radiation driven by solid-state-lasers (Topical Review)

Impact of high-NA half-field to full-field overlay performance by Monte Carlo simulations

Laboratory-based reflectometer using line spectra of an RF-induced gas-discharge lamp in 30- to 200-nm wavelength range

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