2001
DOI: 10.1007/s11664-001-0067-2
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The generic nature of the Smart-Cut® process for thin film transfer

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Cited by 111 publications
(83 citation statements)
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“…The development of the so-called Silicon On Insulator (SOI (TM) ) wafers has demonstrated the huge opportunities offered by the Smart Cut (TM) approach [12]. Moreover, its application for transferring single crystal Lithium Niobate thin layer into silicon proved to be effective for SAW device development [13].…”
Section: Hbar Micro-fabricationmentioning
confidence: 99%
“…The development of the so-called Silicon On Insulator (SOI (TM) ) wafers has demonstrated the huge opportunities offered by the Smart Cut (TM) approach [12]. Moreover, its application for transferring single crystal Lithium Niobate thin layer into silicon proved to be effective for SAW device development [13].…”
Section: Hbar Micro-fabricationmentioning
confidence: 99%
“…However, because of its higher weight, helium produces more defects in the lattice and bigger exfoliated area. Hydrogen is more often used for a lot of semiconductors such as Si (Höchbauer et al, 1999), Ge (Zahler et al, 2007), SiC (Malouf et al, 2005), InP (Aspar et al, 2001), .…”
Section: Nature Of Implanted Ionsmentioning
confidence: 99%
“…Eventually the Smart Cut™ technology, based on Bruel's invention [4] are typically used for splitting of silicon. For manufacturing SOI structures, the implanted surface is bonded to another wafer and splitting is achieved along the implanted zone [13]. The net result is that a thin layer of Si, defined precisely by the implant depth, is transferred from a donor wafer to a handle wafer.…”
Section: Substratesmentioning
confidence: 99%