The Growth and Electrical Characteristics of Epitaxial Layers of Zinc Selenide on p‐Type Germanium

Abstract

The experimental details are given of an eviporation technique for producing epitaxial layers of zinc selenide on 0.1 Rcm p-type germanium substrates. The degree of crystal order in the deposited layer is presented and the results show that, whilst the (100) orientation readily produces epitaxial layers of zinc selenide, the (110) and (111) orientations are more restricted. The preliminary electrical characteristics of the devices formed on the (100) substrate indicate that, at the higher grou t h temperatures, an interfare layer is formed between the germanium and zinc selenide.On prirsente les details expkrimentaux d'une technique d'6vaporation pour la production des couches de ZnSe sur des substrats de Ge de type p et de 0,l ncm. Le degri: d'orientation cristalline dans la couche d6posee est present&. Les resultats indiquent que les plans d'orientation (100) produisent facilement des couches itpitaxikes de ZnSe, tandis qu'il n'en est pas ainsi pour les orientations (1 10) et (1 11). Le caractere dectrique preliminaire des diodes formees stir 1e plan (100) des substrats indique que, aux temperatures plus &levees de d6po-sition. une couche d'interface est formee entri: le Ge et le ZnSe.

Quantum optics of single electrons in quantum liquid and solid helium-4

“…Ge and ZnSe both are widely transparent in the 1 to 12 µm wavelength range [61,62] and have almost perfectly matched lattice constant (5.658 Å versus 5.668 Å) [63], which is superior for molecule beam epitaxy (MBE) growth and wafer bonding process. Furthermore, ZnSe is transparent in the visible wavelength down to 600 nm wavelength, particularly convenient for optical alignment.…”

The growth and properties of epitaxial layers of zinc sulphide on germanium

“…A combined reflection-transmission Laue X-ray diffraction technique as described in an earlier paper [3] was used, the germanium being removed with the sodium hydroxide electropolishing solution. The X-ray photographs were characterised by the method of Ino et al [5] which utilises a parameter R corresponding to the degree of ordering of the material, 100 being equivalent to a single crystal (spots only) and zero being equivalent to polycrystal (rings only).Other techniques used were chemical etching followed by study under a Vickers polarising microscope and X-ray powder pattern methods.…”

“…This paper describes the growth and properties of epitaxial thin films of ZnS deposited on p-type 0.1/2 cm germanium substrates. Heterojunction systems of this type are being studied because of their possible use in infrared to visible wavelength converters with a response extending to 1.5 Fm [3]. The results of some luminescent activation studies of the films are described and the relevant electrical and optical properties of the heterojunction have been investigated briefly to see whether this pair of materials could be used in a wavelength converter.…”