The growth and field electron emission of InGaN nanowires

Ye, F.; Cai, Xing-Min; Wang, X.M.; Xie, Erqing

doi:10.1016/j.jcrysgro.2006.12.072

Cited by 14 publications

(15 citation statements)

References 30 publications

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“…TEM also shows that the nanowires have a core/shell structure with a high In content core and a low In content shell [22,23]. Both cubic and hexagonal InGaN peaks were also revealed by XRD, as shown in Fig.…”

Section: Resultsmentioning

confidence: 79%

“…TEM shows that the InGaN nanowires are single crystalline with both cubic and hexagonal phases [22,23]. TEM also shows that the nanowires have a core/shell structure with a high In content core and a low In content shell [22,23].…”

Section: Resultsmentioning

confidence: 96%

“…Compared with MBE and MOCVD, etc., CVD equipment has the advantage of low cost. Though the CVD growth of InGaN nanowires was reported [22,23], there has been no com- * Corresponding author. plete study about the parameter influence on the morphology of InGaN nanowires.…”

Section: Introductionmentioning

confidence: 99%

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CVD growth of InGaN nanowires

Cai

Jing

et al. 2009

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 96%

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CVD growth of InGaN nanowires

Cai

Jing

et al. 2009

Journal of Alloys and Compounds

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“…Adapted from [34]. (b) Overview of the on and threshold electric fields (E on and E thr , respectively) and maximum current density, J max , for various materials used for field emission to date, in order of dimensionality (1D, 2D and bulk) and increasing work function (Φ), including 1D nanowires -AlQ 3 [35,36], Si [37][38][39], MgO [40,41], AlN [42][43][44][45], CdS [46][47][48][49], W [50][51][52], ITO [53], CuPC [54,55], InGaN [56][57][58], CNTs [59][60][61][62][63] Cu [64][65][66], ZnO [67][68][69][70][71][72], GaN [73,74], ZnMgO [70,75], WO [76][77][78][79] ), MoO 2 [80]…”

Section: Field Emission Application Of Cntsmentioning

confidence: 99%

X-ray generation using carbon nanotubes

et al. 2015

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Since the discovery of X-rays over a century ago the techniques applied to the engineering of X-ray sources have remained relatively unchanged. From the inception of thermionic electron sources, which, due to simplicity of fabrication, remain central to almost all X-ray applications, there have been few fundamental technological advances. However, with the emergence of ever more demanding medical and inspection techniques, including computed tomography and tomosynthesis, security inspection, high throughput manufacturing and radiotherapy, has resulted in a considerable level of interest in the development of new fabrication methods. The use of conventional thermionic sources is limited by their slow temporal response and large physical size. In response, field electron emission has emerged as a promising alternative means of deriving a highly controllable electron beam of a well-defined distribution. When coupled to the burgeoning field of nanomaterials, and in particular, carbon nanotubes, such systems present a unique technological opportunity. This review provides a summary of the current state-of-the-art in carbon nanotube-based field emission X-ray sources. We detail the various fabrication techniques and functional advantages associated with their use, including the ability to produce ever smaller electron beam assembles, shaped cathodes, enhanced temporal stability and emergent fast-switching pulsed sources. We conclude with an overview of some of the commercial progress made towards the realisation of an innovative and disruptive technology.

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“…Recently, core-multishell GaP/GaAsP/GaP nanowire heterostructures grown on Si(111) substrates, with relatively defect-free GaAsP segments, have also been realized using gas source MBE [15]. InGaN core-shell nanowire heterostructures on Si(111), with high In content in the core and low In content in the shell region, have also been demonstrated using CVD, and the formation mechanism is directly related to the spontaneous phase segregation of the nanowires [106,107].…”

Section: Iii-v Nanowire Axial and Radial Heterostructures On Simentioning

confidence: 99%

III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers

2009

J. Nanophoton

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Significant developments have occurred in the area of III-V compound semiconductor nanostructures. The scope of developments includes quantum dots and nanowires epitaxially grown on Si substrates, as well as their applications in light emitting diodes and lasers. Such nanoscale heterostructures exhibit remarkable structural, electrical, and optical properties. The highly effective lateral stress relaxation, due to the presence of facet edges and free surfaces, enables the achievement of nearly defect-free III-V nanoscale heterostructures directly on Si, in spite of the large lattice mismatches and the surface incompatibility. With the incorporation of multiple quantum dot layers as highly effective three-dimensional dislocation filters, self-organized quantum dot lasers monolithically grown on Si exhibit, for the first time, relatively low threshold current (J th = 900 A/cm 2) and very high temperature stability (T 0 = 244 K). III-V semiconductor nanowire light emitting diodes on Si, with emission wavelengths from UV to near-infrared, have also been demonstrated.

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The growth and field electron emission of InGaN nanowires

Cited by 14 publications

References 30 publications

CVD growth of InGaN nanowires

CVD growth of InGaN nanowires

X-ray generation using carbon nanotubes

III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers

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