The growth kinetics of the elongated NiSi2 clusters

Chu, Yung-Ching; Wu, Lin-Jung; Tsai, Chia-Lung

doi:10.1016/j.matchemphys.2007.11.015

Cited by 3 publications

(8 citation statements)

References 12 publications

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“…This can also be proved by the plateau of Ni in EDS results of line structures. A number of works about self-assembled epitaxial Ni silicide have been published [41][42][43][44][45][46], and some works pointed out that the Ni 2 Si phase formed first, followed by NiSi and NiSi 2 after annealing [47][48][49]. Generally, NiSi 2 forms above 600 °C [42][43][44][45]48].…”

Section: Resultsmentioning

confidence: 99%

“…A number of works about self-assembled epitaxial Ni silicide have been published [41][42][43][44][45][46], and some works pointed out that the Ni 2 Si phase formed first, followed by NiSi and NiSi 2 after annealing [47][48][49]. Generally, NiSi 2 forms above 600 °C [42][43][44][45]48]. Therefore, the self-assembled epitaxial line structures in this work are supposed to be NiSi 2 .…”

Section: Resultsmentioning

confidence: 99%

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Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

Li¹,

Wan²,

Wang³

et al. 2023

Beilstein J. Nanotechnol.

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This work reports the formation of nanoflowers after annealing of Au/Ni bilayers deposited on SiO2/Si substrates. The cores of the nanoflowers consist of segregated Ni silicide and Au parts and are surrounded by SiOx branches. The SiO2 decomposition is activated at 1050 °C in a reducing atmosphere, and it can be enhanced more by Au compared to Ni. SiO gas from the decomposition of SiO2 and the active oxidation of Si is the source of Si for the growth of the SiOx branches of the nanoflowers. The concentration of SiO gas around the decomposition cavities is inhomogeneously distributed. Closer to the cavity border, the concentration of the Si sources is higher, and SiOx branches grow faster. Hence, nanoflowers present shorter and shorter branches as they are getting away from the border. However, such inhomogeneous SiO gas concentration is weakened in the sample with the highest Au concentration due to the strong ability of Au to enhance SiO2 decomposition, and nanoflowers with less difference in their branches can be observed across the whole sample.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

Li¹,

Wan²,

Wang³

et al. 2023

Beilstein J. Nanotechnol.

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“…42 The phenomenon of metal silicide (Co silicide) formation and erosion of Si substrate have already been reported by physical or CVD method, followed by annealing at very high temperature. 41 In addition, different shapes of the inverted microstructures on Si substrates were observed, such as triangular Co silicide 43 and Mn silicide nanowire/islands on Si(111) 44 and Ni silicide of square-shaped islands on Si(100) 44 have been reported. Furthermore, the silicon substrate has a strong effect on the orientation of the formed silicide.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Furthermore, the dimension of inverted structures is directly proportional to the hydrothermal synthesis time. In addition, owing to its simplicity and cost-effectiveness, the method may have an advantage compared to other existing Si etching and inverted structure forming techniques. ,,,,− Furthermore, MoS 2 can grow following the patterned microstructures, which provide the possibility to fabricate 2D based patterned devices on a large scale.…”

Section: Resultsmentioning

confidence: 99%

Shape and Orientation Controlled Hydrothermal Synthesis of Silicide and Metal Dichalcogenide on a Silicon Substrate

Ahmed

Ding

Chu

et al. 2020

ACS Appl. Mater. Interfaces

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Shape-controlled MoS 2 has been grown directly on a silicon substrate, for the first time, with the use of a facile hydrothermal synthesis approach. The growth morphology is dependent on the substrate orientation. Square, hexagonal, and triangular patterns of MoS 2 are grown on Si(100), Si(110), and Si(111), respectively. Detailed studies reveal that Mo silicide is formed at the initial stage, and the formation of silicide patterns is dictated by the different surface energies of Si(100), Si(110) and Si(111). Subsequently, shaped MoS 2 patterns are formed following the silicide ones at the thermodynamic equilibrium. The approach for the formation of these patterns can be generalized to other 2D materials and can also be formed on a large scale by a lithography method. The work has shown a new technique to form silicide via solution processing and grow patterned 2D materials directly on silicon substrates, which may have the potential for advancing next-generation electronic devices.

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“…As to the shape dependence on the substrate orientation, existing literatures have documented silicide islands or clusters with various shapes formed when depositing metals on Si substrates followed by annealing. Examples are triangular silicide nanoislands formed on Si (111), 15 manganese silicide nanowires and islands on Si (111), 58 square-shaped NiSi 2 islands on Si (100), 59,60 and CoSi 2 quantum dots formed on Si (111). 61 Zhang et al concluded that triangle, square, and wire-like Cu 3 Si nanostructures can grow depending on the orientation of silicon substrates.…”

Section: Resultsmentioning

confidence: 99%

Shape-Controlled Fabrication of Micro/Nanoscale Triangle, Square, Wire-like, and Hexagon Pits on Silicon Substrates Induced by Anisotropic Diffusion and Silicide Sublimation

et al. 2010

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We report the fabrication of micro/nanoscale pits with facile shape, orientation, and size controls on an Si surface via an Au-nanoparticles-assisted vapor transport method. The pit dimensions can be continuously tuned from 70 nm to several mum, and the shapes of triangles, squares, and wire/hexagons are prepared on Si (111), (100), and (110) substrates, respectively. This reliable shape control hinges on the anisotropic diffusivity of Co in Si and the sublimation of cobalt silicide nanoislands. The experimental conditions, in particular the substrate orientation and the growth temperature, dictate the pit morphology. On the basis of this understanding of the mechanism and the morphological evolution of the pits, we manage to estimate the diffusion coefficients of Co in bulk Si along the 100 and 111 directions, that is D(100) and D(111). These diffusion coefficients show strong temperature dependence, for example, D(100) is ca. 3 times larger than D(111) at 860 degrees C, while they approach almost the same value at 1000 degrees C. This simple bottom-up route may help to develop new technologies for Si-based nanofabrication and to find potential applications in constructing nanodevices.

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The growth kinetics of the elongated NiSi2 clusters

Cited by 3 publications

References 12 publications

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

Shape and Orientation Controlled Hydrothermal Synthesis of Silicide and Metal Dichalcogenide on a Silicon Substrate

Shape-Controlled Fabrication of Micro/Nanoscale Triangle, Square, Wire-like, and Hexagon Pits on Silicon Substrates Induced by Anisotropic Diffusion and Silicide Sublimation

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The growth kinetics of the elongated NiSi2 clusters

Cited by 3 publications

References 12 publications

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiOx branches

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiOx branches

Shape and Orientation Controlled Hydrothermal Synthesis of Silicide and Metal Dichalcogenide on a Silicon Substrate

Shape-Controlled Fabrication of Micro/Nanoscale Triangle, Square, Wire-like, and Hexagon Pits on Silicon Substrates Induced by Anisotropic Diffusion and Silicide Sublimation

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Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches