The growth of GaxIn1−xAs on (100) InP by liquid-phase epitaxy

Abstract

Substantial solid-solution strengthening of GaAs by In acting as InAs4 units has recently been predicted for an intermediate-temperature plateau region. This strengthening could account, in part, for the reduction of dislocation density in GaAs single crystals grown from the melt. Hardness measurements at high temperatures up to 900 °C have been carried out on (100) GaAs, Gllo. 9975 lIlo.0025 As, and Gao.99 II1o.o! As wafers, all of which contain small amounts of boron. Results show a significant strengthening effect in In-doped GaAs. A nominally temperature-independent flow-stress region is observed for all three alloys. The In-doped GaAs shows a higher plateau stress level with increasing In content. The results are consistent with the solid-solution strengthening model. The magnitude of the solid-solution hardening is sufficient to expl.ain the reduction in dislocation density with In addition.

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

“…Particularly, in the present work, we focus on the energetic position of the D 2 level (i.e., E C − E T ≈ 0.75 eV). Considering that In 0.53 Ga 0.47 As has a bandgap energy of~0.75 eV [39][40][41][42], one can expect the localized D 2 state to locate its position near the valence band edge. From all the above results, we can conclude that the energetic position of the located D 2 state is consistent with that of the optical localization state.…”

Pressure and temperature effects on magnetoelectric band energies in GaAs / InxGa1-xAs cylindrical quantum wires

“…The band spacing of indium gallium arsenic (InGaAs) has made this material indispensable for the construction of the detector, especially for fiber optic communications around 1300 and 1500 nm [7][8]. InGaAs was first obtained in 1978 by T. P. Pearsall by growing it on indium phosphate (InP) [9]. Pearsall found the bandwidth of this material, the effective mass of electrons and holehalls, their mobility and the properties of InxGa1-xAs.…”

Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice‐matched to (001) InP Substrates

“…Several methods, for instance step cooling (COOK et al), supercooling (SAKAI et al;PEARSALL et al [1978]), equilibrium cooling (TABATABAIE-ALAVI et al;PEARSALL et al [1979]) and the two-phase solution technique (POLLACK et al; ARAI et al; HYDER et al), have been extensively employed to grow such epitaxial layers. COOK et al (1981), TABATABAIE-ALAVI et al, HSIEH and KUPHAL determined the required liquidus data by direct observation, where as NAKAJIMA et al deduced the values from seed -solution experiments.…”