The growth of single crystals of GaSe

Anis, Mohammad Khalid

doi:10.1016/0022-0248(81)90103-2

Cited by 26 publications

(5 citation statements)

References 6 publications

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“…Undoped GaSe is a p-type layered compound of the III-VI family with a band gap 2.0 eV at room temperature and having a melting point at 960 °C [2]. A layer of GaSe consists of four twodimensional mono-atomic sheets in the sequence of Se-Ga-Ga-Se, where atoms within each layer are tightly bound with a mixture of covalent and ionic bands, and the layers are hold by weak Van der Waal's forces [3].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of nitrogen implanted GaSe single crystal

Karabulut

Parlak

Turan

et al. 2003

Cryst. Res. Technol.

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N-implantation to GaSe single crystals was carried out perpendicular to c-axis with ion beam of 6x10 15 ions/cm 2 dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100-320 K. It was observed that N-implantation decreases the resistivity values down to 10 3 Ω-cm depending on the annealing temperature, from the room temperature resistivity values of as-grown samples lying in the range10 6 -107 Ω-cm. The temperature dependent conductivities exhibits two regions (100-190 and 200-320 K) with the activation energies of 234-267 meV and 26-74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility-temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N-implantation, the carrier density was analyzed by using single donor-single acceptor model. We found acceptor ionization energy as E a =450 meV, and acceptor and donor concentration as 1.3x10 13 and N d =3.5x10 10 cm -3 , respectively.

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Section: Introductionmentioning

confidence: 99%

Electrical properties of nitrogen implanted GaSe single crystal

Karabulut

Parlak

Turan

et al. 2003

Cryst. Res. Technol.

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“…Fig.1 shows such oriented GaSe crystals grown in our Bridgman system. It has also been reported by Anis et al [16] and Sampaio et al [17] that their GaSe crystals grew in the same way. Therefore, a conductivity tensor containing only the diagonal elements cannot be used in the simulations of the growth of these crystals if the growth orientation, direction of c-axis, is different from the ampoule axis.…”

Section: Introductionmentioning

confidence: 52%

Numerical simulation of heat conduction for the growth of anisotropic layered GaSe crystals

Taşarkuyu

Akinoglu

2004

Cryst. Res. Technol.

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In this report, we present the usage of a second rank cylindrical conductivity tensor which we derived to simulate the crystal growth processes of a layered compound GaSe in a cylindrical enclosure by directional solidification. Use of such a tensor is inevitable in the simulations of the growth of highly anisotropic crystals having layered structure, since the crystallographic orientation of the grown material is not necessarily aligned with the ampoule symmetry. Using the finite difference control volume approach in 3D, we solved transient heat conduction equation for a highly anisotropic solid in a cylindrical enclosure. We obtained sloped thermal fields and isothermal surfaces and the magnitudes of the slopes are strong functions of both azimuthal angle and growth orientation. The results showed that the orientation of the crystallographic axes of GaSe in the enclosure is quite effective in the steady and the transient fields, isotherms, and axial and radial temperature gradient within the material. Increase of Bi number decreases the magnitude of the slope of isothermal surface. Anisotropy of the conductivity seems to be effective in the orientation of the growth direction of the resulting crystal within the cylindrical ampoule.

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“…The samples used in the present investigations were GaSe single crystals grown by the Bridgman-Stockbarger method (Anis 1981). X-ray and electron diffraction analysis confirmed that the as-grown GaSe single crystals had an excellent crystallographic structure (Anis and Nazar 1983).…”

Section: Experimental Techniquementioning

confidence: 99%

Thermopower measurements in p-GaSe single crystals parallel and perpendicular to the c-axis

Anis

1988

International Journal of Electronics

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The growth of single crystals of GaSe

Cited by 26 publications

References 6 publications

Electrical properties of nitrogen implanted GaSe single crystal

Electrical properties of nitrogen implanted GaSe single crystal

Numerical simulation of heat conduction for the growth of anisotropic layered GaSe crystals

Thermopower measurements in p-GaSe single crystals parallel and perpendicular to the c-axis

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