Thermopower measurements in p-GaSe single crystals parallel and perpendicular to the c-axis

Capacitance-voltage measurements have been carried out on p-type e-GaSe single crystal V c in the temperature range 300 to 360 K, with applied voltages of 21 , 0 and 11 V . The C-V measurements in this temperature range have shown a shift in capacitance C and conductance G to the higher values with an increase in temperature. The depletion layer width W, the Debye length L D and the doping density N a have been worked out and plots of N a vs. W have shown a decrease in W with an increase in temperature. The plots of L D vs. N a vary as 1 ON a 1 O2 , which gives N a L D C 3.3310 11 chargesOm 2 for doping density of 10 16 m 23 .

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Volume low frequency dispersion (LFD) in high resistivity ε-GaSe

Anis

Hashmi

Shahrukh

et al. 1992

Physica B: Condensed Matter

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Thermopower measurements in p-GaSe single crystals parallel and perpendicular to the c-axis

Cited by 8 publications

References 16 publications

Frequency Response in p-GaSe Single Crystals ∥ at Different Temperatures

Frequency Response in p-GaSe Single Crystals ∥ at Different Temperatures

Capacitance-voltage behaviour inp-type ɛ-GaSe single crystal ∥c at different temperatures

Volume low frequency dispersion (LFD) in high resistivity ε-GaSe

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