Volume low frequency dispersion (LFD) in high resistivity ε-GaSe

Anis, M. K.; Hashmi, R. A.; Shahrukh, Muhammad; Sahba, M.

doi:10.1016/0921-4526(92)90627-5

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…The interaction effect of dc and LPP has already been considered in the past, to interpret the deviation from the ideal Deby response [22 -24]. The GaSe thin films have shown perfect nonnalization of C GaSe Au Contacts J. c -axis (00) and clear LFD in comparison to GaSe single crystals [18][19][20]. The higher resistivity of thin films may have played a dominant role to suppress the contribution of other processes, e.g.…”

Section: Resultsmentioning

confidence: 99%

Dielectric Spectroscopy of GaSe thin film and bulk single crystal

Anis

2008

2008 IEEE International Multitopic Conference

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Section: Resultsmentioning

confidence: 99%

Dielectric Spectroscopy of GaSe thin film and bulk single crystal

Anis

2008

2008 IEEE International Multitopic Conference

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“…The instruments used for the dielectric measurements included a Solatron 1255 frequency response analyser (FRA) coupled with a Chelsea Dielectric Interface in conjunction with a PC (Opus-V), Roland DXY-880 plotter and Oxford DN1704 Cryostat with temperature controller ITC4. The experimental set-up used was the same as reported in an earlier study (Anis et al 1992).…”

Section: Resultsmentioning

confidence: 99%

Influence of Metal?Glass Contact on the Dynamic Response of 0.40Ag2O:0.60P2O5 Glass

Haque¹,

Hashmi²,

Anis³

1994

Aust. J. Phys.

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The results of impedance measurements on a low-conducting o·40Ag20 : o· 60P205 glass are reported in the frequency range 10-3 to 105 Hz and the temperature range 250 to 400 K. The observed dispersions in the complex impedance data are attributed to a barrier effect in the region of the electrodes and are shown to follow simple power law behaviour for low and high frequencies with respect to the loss peak frequency. Using the complex impedance and complex capacitance data, the contact resistance and the corresponding contact capacitance have been worked out. The temperature dependences of the contact resistance R; and the contact capacitance Cs are also reported. The activation energy for this glass is found to be 0·50±0·02 eV.

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“…The experimental procedure is the same as that reported in earlier work [15]. The experimental procedure is the same as that reported in earlier work [15].…”

Section: -Experimentalmentioning

confidence: 87%

Interfacial barrier contribution in Na2B4O7 glass system

et al. 1995

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Frequency domain measurements on Nae B 4 07 and Na2 B4 07(95%)-V2 0~(5%) glass systems have been carried out in the frequency range 10-2 to 104 Hz and temperature range 300 to 450 K. The complex capacitance has shown fractional power law dependences on frequency which obey the generalized Maxwell-Wagner relationships. The activation energy is found to increase with an increase in V2 05 composition.PACS 72.80 -Conductivity of specific semiconductors and insulators. PACS 77.40 -Dielectric loss and relaxation.

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Volume low frequency dispersion (LFD) in high resistivity ε-GaSe

Cited by 12 publications

References 15 publications

Dielectric Spectroscopy of GaSe thin film and bulk single crystal

Dielectric Spectroscopy of GaSe thin film and bulk single crystal

Influence of Metal?Glass Contact on the Dynamic Response of 0.40Ag2O:0.60P2O5 Glass

Interfacial barrier contribution in Na2B4O7 glass system

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