The growth of ZnSe single crystals by physical vapor transport

Growth of Zinc Chalcogenides

“…In this so-called free-growth method, the polycrystalline source is put in a chamber with perforated walls in the upper part of the ampoule as schematized in Fig. In the classical method of Piper and Polich [71], successfully used for the growth of ZnSe single crystals [72][73][74][75][76][77], no control of the stoichiometry of the charge is used, but sometimes there is a preliminary treatment of the source [69,78,79]. A seed is placed below at a definite distance from the chamber on the center of a sapphire or quartz pedestal.…”

“…15.10. Either seeding using the (111)B face of ZnSe crystals [80] or the selection of a seed crystal from a needle-shaped cavity in the cold finger attached to the growth end of the ampoule [74] were sometimes used in this simple Piper and Polich configuration. The total pressure in the growth ampoule is about 1 atm.…”

Solution-based Ag-doped ZnSe thin films with tunable electrical and optical properties

“…Among the various wide bandgap semiconductors, zinc selenide (ZnSe) is regarded as one of the most promising materials, 4 because of its direct bandgap (2.70 eV at room temperature) and the fact that it does not contain Cd, which is not environmentally benign. A variety of techniques such as molecular beam epitaxy (MBE), 5 physical vapor transport, 6 chemical vapor deposition (CVD) 7 and chemical bath deposition (CBD) 8 have been used to grow ZnSe crystals as well as thin-films. Among these methods, CBD is particularly interesting because it is inexpensive.…”