The Impact of Fringing Field on the Device Performance of a p-Channel Tunnel Field-Effect Transistor With a High-$\kappa$ Gate Dielectric

Effects of Germanium mole fraction variation at the source of a dielectrically modulated Tunneling FET based biosensor

“…A careful observation revels that this band bending can be viewed as a result of two different factors, namely conduction band bending at the channel side of the tunneling junction and conduction band lowering at the source side of the junction. This observation is in sync with the reported results on gate dielectric constant variation in TFET [16][17][18][19]. The degree of the source side conduction band lowering due to bio-molecule conjugation diminishes with increasing Germanium mole fraction, as indicated in the plot within inset of Fig.…”

“…Since the BTBT rate depends on the conduction band bending at the tunneling junction [20], the increasing Germanium mole fraction diminishes the extent of the BTBT enhancement due to bio-molecule conjugation. In accordance with reported literatures on gate dielectric constant variation in TFET [16][17][18][19], the gate induced fringing field effect over source region can be identified as the key contributing factor for conduction band lowering at the source side of tunneling junction of DMTFET. Thus the source side lateral electric field profile has been considered next, which was depicted in Fig.…”

Impact of fringing fields in a p-channel junctionless transistor

“…A channel thickness (T si ) of 10 nm and source/drain extensions of 10 nm is kept for all simulations. The simulations are carried out using 2D ATLAS device simulator [18] with Fermi-Dirac model without impact ionization, doping concentration-dependent carrier mobility, electric field-dependent carrier model, band gap narrowing model, Shockley-Read-Hall (SRH) recombination/ generation to account for leakage currents and density gradient model to account for quantum mechanical effects.…”

An Analytical Model for Tunnel Barrier Modulation in Triple Metal Double Gate TFET

“…The characteristics of nanoscale MOSFET have deteriorated due to their antagonistic scaling [3]. Due to this antagonistic scaling, the MOS devices are affected by various short-channel effects (SCEs), such as drain-induced barrier lowering, surface scattering, and so on [4]. The leakage current of the MOSFET is also increased due to this aggressive scaling and also the carrier injection in source-channel junction of the MOSFET is governed by thermionic emission over the potential barrier and hence the inverse subthreshold slope is limited to 60 mV/decade at room temperature [5].…”