2001
DOI: 10.1016/s0022-0248(01)01277-5
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The impact of nitrogen on the defect aggregation in silicon

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Cited by 92 publications
(76 citation statements)
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“…A similar concentration of vacancy species was measured by a platinum diffusion technique in nitrogen-doped FZ samples [9]. The critical nitrogen concentration to suppress voids was found [10] to be in the order of C vo , which implies a very high binding energy of the vacancy-nitrogen complex.…”
Section: Introductionmentioning
confidence: 56%
See 1 more Smart Citation
“…A similar concentration of vacancy species was measured by a platinum diffusion technique in nitrogen-doped FZ samples [9]. The critical nitrogen concentration to suppress voids was found [10] to be in the order of C vo , which implies a very high binding energy of the vacancy-nitrogen complex.…”
Section: Introductionmentioning
confidence: 56%
“…To account for the difference between CZ and FZ crystals, it was previously [5,10] hypothesized that the concentration of nitrogen traps is strongly reduced in oxygen-rich CZ crystals, due to 'oxidation' of nitrogen (formation of nitrogen--oxygen complexes). However, such a reduction seems to be insignificant (see Section 4), and a different explanation is required.…”
Section: Introductionmentioning
confidence: 99%
“…N i has a low diffusion barrier of 0.4 eV (Schultz & Nelson, 2001). NVV N   as suggested in (von Ammon et al, 2001). Though, VN 2 is a metastable complex, it is also foreseen as an active complex during crystal growth as it contributes to the formation of very stable grown-in N-related microdefects such as V 2 N 2 (reaction R4 and R5).…”
Section: 3mentioning
confidence: 95%
“…As countermeasures for this problem, the following alternatives are proposed; use of epitaxial wafer and annealing in hydrogen or nitrogen atmosphere. Nitrogen-doped crystals have been widely discussed [66,67].…”
Section: Grown-in Defectsmentioning
confidence: 99%