1985
DOI: 10.1088/0022-3719/18/16/001
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The influence of alloy disorder on the k.p interaction in (GaIn)(AsP)/InP

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Cited by 13 publications
(3 citation statements)
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“…4. A linear increase is observed, with a slope dmzldP = 3.7 x lo-'' m k b a r ' , which is very different from the value ( = 7 x lo-" m kbar-') determined from magnetophonon measurements under pressure (3,16). Using the Kane theoretical expression (17): and keeping E, constant throughout our pressure range, we find dmgldP = 4.6 x lo-" m k b a r ' .…”
Section: Methodscontrasting
confidence: 60%
See 1 more Smart Citation
“…4. A linear increase is observed, with a slope dmzldP = 3.7 x lo-'' m k b a r ' , which is very different from the value ( = 7 x lo-" m kbar-') determined from magnetophonon measurements under pressure (3,16). Using the Kane theoretical expression (17): and keeping E, constant throughout our pressure range, we find dmgldP = 4.6 x lo-" m k b a r ' .…”
Section: Methodscontrasting
confidence: 60%
“…The design of devices and the optimization of their performances require a detailed knowledge of the properties of the basic materials, and one of the most important parameters to be known with precision is the value of the electron effective mass and its variation with energy. Several reports have been published on this matter concerning bulk Ga, ,,In, ,,As, based on far-infrared techniques (1,2), magnetophonon effect measurements (2,3), as well as interband magnetoabsorptlon measurements (4). Farinfrared and magnetophonon measurements revealed that the effective mass increases faster with energy than predicted by standard k -p theory (1 -3).…”
Section: Introductionmentioning
confidence: 99%
“…Such an interpretation is consistent with the fact that electron-phonon coupling is increased at high pressure because the 2D carrier concentration becomes low and the screening of the electron-phonon interaction is suppressed [23]. On the other hand, in GaInAs-based heterojunctions with AlInAs [23] and InP [24] barrier layers, the band-edge effective mass was estimated to increase with pressure at a rate smaller than that estimated for bulk GaInAs [29]. For GaInAs/InP heterojunctions this deviation was found to be dependent on the 2D carrier concentration, being smaller for lower-concentration and more important for higherconcentration samples.…”
Section: Magnetophonon Resonance In 2d Systems Under Hydrostatic Pres...supporting
confidence: 67%