2019
DOI: 10.1016/j.apsusc.2018.03.169
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The influence of atomic layer deposition process temperature on ZnO thin film structure

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Cited by 30 publications
(36 citation statements)
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“…As displayed in Figure 3b, two peaks located at 1021.1 and 1044.1 eV can be obviously seen, which can be attributed to the Zn 2p 3/2 and Zn 2p 1/2 electronic states, respectively. The interval between the Zn 2p 3/2 and Zn 2p 1/2 electronic states was calculated to be 23.0 eV, which was generated from the spin-orbit splitting and is the same as the previously reported value [32]. In addition, the binding energy of the Zn 2p 3/2 electronic states was slightly lower than the reported value (1021.8 eV) of the bulk ZnO [33].…”
Section: Resultssupporting
confidence: 70%
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“…As displayed in Figure 3b, two peaks located at 1021.1 and 1044.1 eV can be obviously seen, which can be attributed to the Zn 2p 3/2 and Zn 2p 1/2 electronic states, respectively. The interval between the Zn 2p 3/2 and Zn 2p 1/2 electronic states was calculated to be 23.0 eV, which was generated from the spin-orbit splitting and is the same as the previously reported value [32]. In addition, the binding energy of the Zn 2p 3/2 electronic states was slightly lower than the reported value (1021.8 eV) of the bulk ZnO [33].…”
Section: Resultssupporting
confidence: 70%
“…In addition, the binding energy of the Zn 2p3/2 electronic states was slightly lower than the reported value (1021.8 eV) of the bulk ZnO [33]. XPS O 1s core-level spectra XPS has been demonstrated to be a powerful technology for confirming the chemical composition and electronic structure of the as-received ZnO thin films [32], as depicted in Figure 3a-d. Figure 3a represents the XPS analysis spectra of the as-achieved ZnO thin films grown on quartz glass and sapphire (001) substrates annealed at 600 • C for 1 h, respectively. Several peaks can be seen in Figure 3a, which correspond to the elements of Zn, C, and O, respectively.…”
Section: Resultsmentioning
confidence: 84%
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“…Ultimately, as a result of the sequential surface reaction, an ultra-thin layer is formed. The advantages of the ALD method include, among others: an accurate control of the thickness of the deposited layers, good reproducibility, high homogeneity over a large area, excellent compatibility, denseness and compactness without discontinuities or defects in the structure, and low growth temperatures (in the case of this layer, the temperature window is in the range of 100–200 °C) [ 2 , 26 , 27 , 28 ].…”
Section: Introductionmentioning
confidence: 99%
“…In the case of the ZnO layer, the ALD temperature window has been investigated by many authors, and there exists no doubt regarding this matter [ 2 , 4 , 7 , 8 , 9 , 18 , 19 , 20 , 21 , 35 , 36 , 37 ]. Unfortunately, there is little research work related to determining the optimal number of ALD cycles for this layer applied to a steel substrate, which would ensure the best performance properties, in particular corrosion resistance.…”
Section: Introductionmentioning
confidence: 99%