The Influence of Constitutional Supercooling on the Distribution of Te-Particles in Melt-Grown CZT

p-type doping efficiency in CdTe: Influence of second phase formation

“…On the other hand, extended Te defects tend to form inclusions as uniform tetrahedral structures along 〈111〉 directions in the CdTe lattice. 13 The two-dimensional appearance is thus influenced by the angle from which it is viewed and can appear as square or rhomboidal, depending on the crystal orientation. These inclusions have been consistently found in the same grain with triangular inclusions.…”

Fundamentals and engineering of defects

“…Their presence increases with conditions of morphological instability (section 5.4). Indeed, Henager et al [88] correlated the distribution appearance of inclusions in (Cd, Zn)Te crystals grown from Te-rich melt-solution with constitutional supercooling. The often observed Te inclusion arrangement in the form of pearl-strings was attributed to the Rayleigh-Plateau instability.…”

Flux-assisted CdTe and CdSe growth using an in-situ dynamic flux removal process

“…Cadmium telluride (CdTe) is a semiconductor with a 1.52 eV band gap (300 K) (Knoll, 2000) with a wide range of applications including photovoltaics (Gessert and Bonnet, 2015), radiation detection (Becker et al, 2011;Burger et al, 2003), mid-infrared-transparency (Wald, 1977), electro-optical modulation (Johnson, 1968;Johnson et al, 1969), optical mixing (McArthur and McFarlane, 1970), continuous second harmonic generation (Stafsudd and Alexander, 1971), piezoelectrics (Berlincourt et al, 1963), and electroluminescent diodes (Mandel and Morehead, 1964). Some of these applications utilize dopants such as Zn, As, Hg, and In (Carmody and Gilmore, 2011;Henager et al, 2015;Schaake et al, 1985). Many CdTe applications require large single crystals that are grown using techniques such as Czochralski pulling (Triboulet and Siffert, 2010), vertical or horizontal Bridgman (Henager et al, 2015;Triboulet and Siffert, 2010), the traveling heater method (Shiraki et al, 2007;Triboulet and Siffert, 2010), and zone refining (Triboulet and Siffert, 2010;Woodbury and Lewandowski, 1971) while others utilize polycrystalline forms (Gessert and Bonnet, 2015), thin films, or even quantum dots (Wuister et al, 2003).…”

“…Some of these applications utilize dopants such as Zn, As, Hg, and In (Carmody and Gilmore, 2011;Henager et al, 2015;Schaake et al, 1985). Many CdTe applications require large single crystals that are grown using techniques such as Czochralski pulling (Triboulet and Siffert, 2010), vertical or horizontal Bridgman (Henager et al, 2015;Triboulet and Siffert, 2010), the traveling heater method (Shiraki et al, 2007;Triboulet and Siffert, 2010), and zone refining (Triboulet and Siffert, 2010;Woodbury and Lewandowski, 1971) while others utilize polycrystalline forms (Gessert and Bonnet, 2015), thin films, or even quantum dots (Wuister et al, 2003). Different techniques have been used to make CdTe-based products including chemical spraying, electrodeposition, vacuum sublimation, non-vacuum sublimation, non-vacuum printing, screen printing, sputtering, and hydrothermal approaches (Chu and Chu, 1993;Gessert and Bonnet, 2015;Triboulet and Siffert, 2010).…”

“…A drawback to fluxassisted growth is that crystals grow at slower rates (by ~100×) (Koohpayeh, 2016) due to the reduced temperature, but this can also lead to a reduced strain in the final product. An additional drawback is that the flux can be found at the grain boundaries of crystals (Henager et al, 2015). However, with fluxassisted growth being possible at lower temperatures, less sophisticated and costly equipment can be used to grow materials that typically require high temperatures.…”