The influence of film-to-substrate characteristics on the electron field emission behavior of the diamond films

Luo, Jief-Yir; Liu, Kuo‐Shung; Lee, Jau-Sung; Lin, I‐Nan; Cheng, Hsiu‐Fung

doi:10.1016/s0925-9635(97)00282-3

Cited by 12 publications

(3 citation statements)

References 16 publications

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“…Higher nucleation site density helps in the evolution of electron emission centers. Obtaining textured, continuous, adherent, and smooth diamond films using methods like in situ carburization, bias enhanced nucleation, and the two stage nucleation process as well as substrate pretreatment and seeding processes have been reported to increase the number of nucleation sites and enhance EFE properties. − Altering the carbon layer content, deposition of metallic layers such as Ti, Cr, Mo, or dual metal layers like W–Al or pretreatment with Ti powder on Si substrates, also enabled one to obtain high nucleation densities and enhanced EFE properties. − Improvement of the EFE properties in diamond films grown on Au-coated Si substrates was attributed to reduction of conduction barrier of electron transport from the substrates to the diamond surface. , …”

Section: Introductionmentioning

confidence: 99%

Engineering the Interface Characteristics of Ultrananocrystalline Diamond Films Grown on Au-Coated Si Substrates

Sankaran

Panda

Sundaravel

et al. 2012

ACS Appl. Mater. Interfaces

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Enhanced electron field emission (EFE) properties have been observed for ultrananocrystalline diamond (UNCD) films grown on Au-coated Si (UNCD/Au-Si) substrates. The EFE properties of UNCD/Au-Si could be turned on at a low field of 8.9 V/μm, attaining EFE current density of 4.5 mA/cm(2) at an applied field of 10.5 V/μm, which is superior to that of UNCD films grown on Si (UNCD/Si) substrates with the same chemical vapor deposition process. Moreover, a significant difference in current-voltage curves from scanning tunneling spectroscopic measurements at the grain and the grain boundary has been observed. From the variation of normalized conductance (dI/dV)/(I/V) versus V, bandgap of UNCD/Au-Si is measured to be 2.8 eV at the grain and nearly metallic at the grain boundary. Current imaging tunneling spectroscopy measurements show that the grain boundaries have higher electron field emission capacity than the grains. The diffusion of Au into the interface layer that results in the induction of graphite and converts the metal-to-Si interface from Schottky to Ohmic contact is believed to be the authentic factors, resulting in marvelous EFE properties of UNCD/Au-Si.

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Section: Introductionmentioning

confidence: 99%

Engineering the Interface Characteristics of Ultrananocrystalline Diamond Films Grown on Au-Coated Si Substrates

Sankaran

Panda

Sundaravel

et al. 2012

ACS Appl. Mater. Interfaces

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“…Although the nonlinearity of the F-N plot is still at issue, it may be attributed to surface states or geometrical effects similar to those of carbon materials. [14][15][16] It is also conjectured that the nonlinearity of the F-N plot may be induced by a transition from thermionic to field emission. 17) The stability of the emission current at a fixed emitterto-collector voltage (V d ¼ 20 V) is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

A Quasi-Planar Thin Film Field Emission Diode

Lin

Juan

Lai

et al. 2007

jjap

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A novel quasi-planar thin-film field emitter is fabricated utilizing thin-film deposition and wet etching processes. The spacing between the emitter and collector could be well controlled via the thickness of Cr layers, which creates sub-micron gap. A forming process causes an increased surface roughness of emitters and results in a higher field enhancement factor, which shows better field emission characteristics. The turn-on voltage (at which the current level is 100 nA) of the device with the Cr thickness of 300 nm is as low as 12 V.

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“…The turn-on field was defined by the intersection of two straight lines extrapolated from the low-voltage (thermionic and leakage currents) segment, and high-voltage (cold emission current) segment of the F-N plots (Fig. 3) [6]. The effective work function ϕ e f can be deduced from the F-N plots in cold emission region (Fig.…”

Section: Resultsmentioning

confidence: 99%

Investigations of electron emission from DLC thin films deposited by means of RF PCVD at various self-bias voltages

Jarzyńska,

Znamirowski,

Cłapa

et al. 2007

JTIT

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The aim of this paper is to report the results of field emission experiments on undoped, flat diamond-like carbon (DLC) thin films deposited at various self-bias voltages using radio frequency plasma chemical vapor deposition (RF PCVD) technique. It has been observed that the emission properties improve when the absolute value of self-bias voltage becomes higher, e.g., the turn-on field value decreases. The correlation between electron field emission and sp2 content in these films showed improvement of electron emission properties of DLC films for higher amount of sp2 phase.

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The influence of film-to-substrate characteristics on the electron field emission behavior of the diamond films

Cited by 12 publications

References 16 publications

Engineering the Interface Characteristics of Ultrananocrystalline Diamond Films Grown on Au-Coated Si Substrates

Engineering the Interface Characteristics of Ultrananocrystalline Diamond Films Grown on Au-Coated Si Substrates

A Quasi-Planar Thin Film Field Emission Diode

Investigations of electron emission from DLC thin films deposited by means of RF PCVD at various self-bias voltages

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