The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

Jebalin, Binola K.; Rekh, A. Shobha; Prajoon, P.; Kumar, Neeraj; Nirmal, D.

doi:10.1016/j.mejo.2015.04.006

Cited by 47 publications

(11 citation statements)

References 21 publications

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“…Considerable modification in electrical characteristics of these devices became possible by growing a thin insulating Çetinkaya et al 2015). Reported studies confirms better passivation is achieved with materials having higher dielectric constant (Bengi et al 2010, Jebalin et al 2015, Usman et al 2011. On the other hand, thickness of such insulating layer also plays an important role.…”

Section: Introductionmentioning

confidence: 89%

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Yıldırım

2016

KSEJ

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layer between metal and semiconductor. Such insulating layer alters barrier height, leakage current, series resistance, interface states and device capacitance. Moreover, it helps passivation of dangling bonds, prevents interdiffusion between metal and semiconductor and alleviates electric field reduction (Gökçen et al. 2011, Çetinkaya et al. 2015). For the last couple decade, researchers try various insulating materials both organic and inorganic in order to obtain optimized device characteristics (

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Section: Introductionmentioning

confidence: 89%

Untitled

Yıldırım

2016

KSEJ

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“…It was obtained using two-dimensional (2D) TCAD device simulator software. The transistor structure consisted of a 2 µm undoped GaN buffer layer on a sapphire substrate, a 200 nm thick GaN channel, and a 15 nm thick Al 0.28 Ga 0.72 N barrier layer [27]. The doping concentration of the GaN channel layer and AlGaN barrier layer were assumed to be 10 15 cm −3 and 5 × 10 16 cm −3 , respectively, which is similar to those reported in Refs.…”

Section: Methodsmentioning

confidence: 99%

Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

Pharkphoumy

Janardhanam

Jang³

et al. 2021

Electronics

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This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (VBR) characteristics using a TCAD simulation. The effect of device geometry on the device performance was explored by varying the device design parameters, such as the field plate length (LFP), gate-to-drain length (LGD), gate-to-source length (LGS), gate length (LG), thickness of the Si3N4 passivation layer (Tox), thickness of the GaN channel (Tch), and AlGaN barrier (Tbarrier). The VBR was estimated from the off-state drain current versus the drain voltage (IDS–VDS) curve, and it exhibited a strong dependence on the length and thickness of the parameters. The optimum values of VBR for all the device’s geometrical parameters were evaluated, based on which, an optimized device geometry of the field-plated AlGaN/GaN HEMT structure was proposed. The optimized AlGaN/GaN HEMT structure exhibited VBR = 970 V at IGS = 0.14 A/mm, which was considerably higher than the results obtained in previous studies. The results obtained in this study could provide vital information for the selection of the device geometry for the implementation of HEMT structures.

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“…Besides, the thicknesses and dielectrics constants of each layer of passivation layers also affect electric field distribution. [ 239 ] Therefore, it is hard to give a universal rule for designing a field plate configuration. Optimizing FP configuration relies on engineering experiments or TCAD.…”

Section: Electric Field Manipulationmentioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

133

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

Cited by 47 publications

References 21 publications

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Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

Recent Advances in GaN‐Based Power HEMT Devices

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