The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (001) LaAlO3

In this study, we report the growth and characterization of semipolar (1013) InN films grown on LaAlO3(112) substrate by metalorganic molecular beam epitaxy. InN films were grown at various substrate temperatures in the range of 465–540 °C. Structural and optical properties of semipolar InN were investigated by high resolution X-ray diffraction, scanning electron microscopy, and photoluminescence measurements. The results show that semipolar (1013) InN layers can be grown at 510 °C with the full-width at half maximum of the X-ray rocking curve about 1400 arcsec and electron mobility of 494 cm2 V-1 s-1.

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Growth of Semipolar InN(1013) on LaAlO₃(112) Substrate

Chen

Tian

Wang

et al. 2011

Jpn. J. Appl. Phys.

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The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (001) LaAlO3

Cited by 3 publications

References 11 publications

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Growth of Semipolar InN(1013) on LaAlO₃(112) Substrate

Growth of Semipolar InN(1013) on LaAlO₃(112) Substrate

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The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (001) LaAlO3

Cited by 3 publications

References 11 publications

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Growth of Semipolar InN(1013) on LaAlO3(112) Substrate

Growth of Semipolar InN(1013) on LaAlO3(112) Substrate

Contact Info

Product

Resources

About

Growth of Semipolar InN(1013) on LaAlO₃(112) Substrate

Growth of Semipolar InN(1013) on LaAlO₃(112) Substrate