The influence of microwave pulse width on the thermal burnout effect of an LNA constructed by a GaAs PHEMT

Yi, Shipeng; Du, Z.

doi:10.1016/j.microrel.2018.04.016

Cited by 9 publications

(2 citation statements)

References 12 publications

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“…Yet, the EMP threat described above mainly causes problems in these receiver amplifier stages. The characteristic of amplifying a low-level normal signal exhibits high vulnerability to EMP transient signals with high power level; moreover, when it is exposed to EMP, the microwave receiver temporarily stops or causes permanent failure [12][13][14]. For this reason, a device that can protect the microwave receiver is becoming essential in communication systems.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of an Adjustable Diode-Integrated Waveguide-Based Electromagnetic Pulse Limiter for Microwave Receiver

Woo,

Ho Kim,

Won

et al. 2024

IEEE Access

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A new waveguide-based diode limiter is proposed to protect microwave-amplifying receivers from high-power electromagnetic pulses. The diode limiter was designed and fabricated to exhibit low insertion loss for normal signals while effectively blocking high-power transient signals. The proposed structure incorporates a diode element positioned between vertically connected cylinders inside the waveguide, with a square-integrated structure symmetrically placed on both the top and bottom. The diode element is inserted beneath a thin rod. Under low incident power, the diode remains inoperative, maintaining an electrically open state. In the presence of high incident power, the diode activates, transitioning into an electrically short state. The newly proposed structure enables the cylinder's vertical movement, providing the advantage of adjustability to shift the center operating frequency of the diode limiter. It incorporates a bandpass filter structure for normal signals and a band-stop filter characteristic for transient signals. Moreover, the symmetrical square-integrated structure is employed to concentrate the surface current at the diode element, enhancing the changing state of the diode limiter. This configuration demonstrates a low insertion loss of 0.38 dB for normal signals and a blocking coefficient of 8 dB for transient signals at the 5.68 GHz operating frequency.

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Section: Introductionmentioning

confidence: 99%

Design and Analysis of an Adjustable Diode-Integrated Waveguide-Based Electromagnetic Pulse Limiter for Microwave Receiver

Woo,

Ho Kim,

Won

et al. 2024

IEEE Access

View full text Add to dashboard Cite

show abstract

“…Therefore, they have a significant influence on the performance of RADAR systems, and are likely to be affected by high-power and strong signals, such as EMP threats [14][15][16]. These high-power signals can generate unnecessary voltages inside the device, which can lead to poor performance or destruction of the device [17,18].…”

Section: Introductionmentioning

confidence: 99%

Microwave Power Limiter Having H-Shaped Slot Structure With Enhanced Plasma Discharge by Electrostatic Potential

Park,

Lee

et al. 2024

IEEE Access

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A microwave power limiter with an H-type slot structure is proposed as a waveguide structure that blocks high-power microwaves through plasma discharge. At an operating frequency of 5.75 GHz, the electric field is concentrated in the discharging electrode gap; when high power is applied, the plasma limiter discharges, and low power is transmitted. By contrast, when low power is applied, it is transmitted without loss. An H-type resonance structure was used to increase the electric field concentration and selectivity within the waveguide. At 5.75 GHz, the insertion loss of the H-type slot structure was 1.85 dB. The electric field concentration increased to 49492 V/m, and the 3 dB bandwidth was 535 MHz. In addition, the plasma discharge onset level in the xenon gas was lower because of the electrostatic potential. When an electrostatic potential of 300 V was applied, the plasma discharge onset level decreased from 310 to 180 W.

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Plasma-discharge-integrated slot structure for microwave power limiter

Woo

Lee

2023

Sci Rep

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A slot structure was combined with a discharge electrode to limit incident high-power microwaves via the integration of plasma discharge. At the target resonating frequency of 9.45 GHz, the surface current was concentrated at an electrode, and the electric field was enhanced by the proposed design to lower the response power level of the incident signal. When a low-power signal is injected, plasma is not generated, and the incident wave travels without insertion loss. Double-stage slot structures were utilized to broaden the band-pass characteristics in the frequency domain, and the demonstrated plasma limiter exhibited an insertion loss of 1.01 dB at 9.45 GHz. The xenon gas pressure was optimized with the shortest distance of 100 µm between the upper and lower electrodes to reduce the discharge power of the plasma. In the case of a high-power signal input, as xenon-gas breakdown occurred, the transmitted signal was close to zero, and most of the high-power signal was reflected with a blocking efficiency of 40.55 dB. The demonstrated result will be useful to protect the receiver of a radio detection and ranging system from the high power microwave.

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The influence of microwave pulse width on the thermal burnout effect of an LNA constructed by a GaAs PHEMT

Cited by 9 publications

References 12 publications

Design and Analysis of an Adjustable Diode-Integrated Waveguide-Based Electromagnetic Pulse Limiter for Microwave Receiver

Design and Analysis of an Adjustable Diode-Integrated Waveguide-Based Electromagnetic Pulse Limiter for Microwave Receiver

Microwave Power Limiter Having H-Shaped Slot Structure With Enhanced Plasma Discharge by Electrostatic Potential

Plasma-discharge-integrated slot structure for microwave power limiter

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