The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Abstract

Wu, P. W.; et al., "The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/nIn0.53Ga0.47As metal-oxide-semiconductor capacitor," Appl. Phys. Lett. 97, 042903 (2010); http:// dx

Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

“…These C-V curves are quite smooth from the accumulation region, passing through the depletion, to the inversion region. This behavior, the so-called true inversion responses, provides evidence that the minority carriers (electrons and holes) are dominated by the generationrecombination mechanism and nearly free from the interaction of interface defect states [2], [3].…”

“…The poor quality of high-k/III-V interface results in Fermi level pinning that leads to loss of high-operation performance and low-power consumption characteristics [1]. Besides many interfacial techniques [2]- [5], nitrogen-passivation has been proposed as a sufficient treatment, with different approaches, including remote plasma pretreatments and AlN-passivation layers, for reduced interface trap density (D it ) [6]- [9]. Highquality III-N and III-V surfaces were demonstrated with in situ nitrogen plasma pregate [7], [8].…”

High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces

“…The use of sulphur based chemicals such as ammonium sulphide (NH 4 ) 2 S [1,9] have been extensively investigated due to its effectiveness at removing native oxides and passivating the surface thereby improving the electrical characteristics of devices [1,3,10,11]. Different thermal treatments, like post deposition forming gas annealing at temperatures of 400-500°C, have been reported to improve the electrical characteristics of Al 2 O 3 / InGaAs based MOS structures [12,13]. Therefore, understanding of the effects of these high temperature anneals on the Al 2 O 3 / InGaAs interface chemistry is important as some studies have shown evidence of inter diffusion across the interface [14,15].…”

Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

“…In recent years there has been progress in reducing the density of interface states in the In 0.53 Ga 0.47 As MOS system to the point where genuine surface inversion has been achieved in the capacitance-voltage response of both n and p-type In 0.53 Ga 0.47 As MOS structures [1][2][3]. In addition, recent work has shown how the frequency scaled conductance, G/x, and the derivative of capacitance with angular frequency, ÀxdC/dx, are related, which can be used to evaluate the oxide capacitance and the minority carrier generation lifetime from the In 0.53 Ga 0.47 As MOS system in inversion [4].…”