The infrared spectrum and vapour pressure of lead diiodide

On the Deposition of Lead Halide Perovskite Precursors by Physical Vapor Method

“…For PbI 2 , the experimental solid vapor pressures are slightly higher than the results presented by Konings et al and lower than the data published by Duncan and Thomas . The consistency of the experimental results of this work can be noted by the fine agreement with the thermodynamic properties of vaporization derived from the literature and the data derived from the experimental fusion/sublimation results.…”

“…The dependence of vapor pressure with the sublimation temperature enables derivation of thermodynamic properties of phase equilibria that are related to the crystal packing of each halide. In spite of their crucial importance for the physical vapor deposition process, there are few literature reports concerning the determination of thermodynamic properties of sublimation of PbCl 2 , PbBr 2 , and PbI 2 and the results are not concordant. − …”

Achieving highly uniform two-dimensional PbI 2 flakes for photodetectors via space confined physical vapor deposition

“…For the synthesis of graphene, the gas source can penetrate the Cu substrate to the inside of the Cu enclosure or the trapping tube. While for the solid PbI 2 source, the vapor pressure is relatively low even at high temperature and low-pressure conditions [44], so the PbI 2 vapor can hardly reach the inside of the commonly used confined space. To solve this problem, we choose to put a quartz glass upon the substrate instead of trapping tube to form a sandwich-like confined space.…”

The growth of methylammonium lead iodide perovskites by close space vapor transport

“…Previous research indicates that for single-junction, perovskite solar cells, the optimal thickness of the MAPI absorber layer is z400 nm, 27 which requires the PbI 2 precursor lm to be z200 nm thick. 28 PbI 2 was deposited using a source temperature (T source ) ¼ 260 C, and a substrate temperature (T sub ) ¼ 215 C, according to a Clausius-Clapeyron t of its vapor pressure ðP vap PbI2 Þ, 20 to produce a vapor pressure difference of two orders of magnitude between the source (P vap source ) ¼ 2 Â 10 À6 AE 8 Â 10 À7 torr and the substrate (P vap sub ) ¼ 6 Â 10 À8 AE 3 Â 10 À8 torr. Depositions were carried out at a pressure (P) ¼ 1 torr and the deposition time (t) was varied to achieve a desired lm thickness.…”

“…The application of an all-vapor CSVT process to directly deposit methylammonium lead iodide (CH 3 NH 3 PbI 3 , MAPI) thin lms must differ from CdTe deposition by CSVT, where the absorber sublimes from a single molecular source to form Cd and Te 2 vapors that react at the substrate and form a solid lm, 16 because the vapor pressures of the constituent compounds of MAPI perovskites (PbI 2 and MAI) are too dissimilar to deposit stoichiometric lms from a single source. 20,21 Therefore, a two-stage CSVT process has been developed to form the MAPI absorber layer by depositing a lm of PbI 2 and reacting it in MAI vapor as shown in Fig. 1.…”