The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

Abstract

Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(ll1) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.

Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces

“…However, previous ellipsometry studies of desorption of implanted Ar from Si surfaces [3] show that desorption takes place at temperatures as low as 400°C, reaching a maximum at 600°C. Complete desorption is achieved at 800 ""C and the Si surface returns to its original state [4]. These results do not agree with our observation that ordering occurs between 600 and 850°C, and the line defects only disappear at 950°C or upon flashing the surface to 1200°C.…”

Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification

“…This latter dose leads to the initial saturation of the single-crystal damage before the C, F-film has begun to develop. This damage extends to a depth 03940a which may be estimated to be about ¿12 = (Rp + 2 Qp) K, from the data reported in reference [24] ; Rp is the projected range and ce the longitudinal range straggling ; K is a factor the value of which is between 1 and 2 according to the nature and energy of the impinging ions, and the nature and crystallinity of the solid. If one considers the low pressure operation of the gun, the F+ and C+ monoatomic ions have an important intensity and they enter the silicon with the full energy.…”

“…Furthermore, as shown in reference [24], a silicon damaged under Ar+ ion bombardment may have, when the saturation is reached and according to the light wavelength, the same d value as that of a substrate cleaned in an ultra-high vacuum. Therefore a more sensitive characterization must be done in order to further investigate the residual near-surface damage (Sect.…”

“…Appl. 24 Selective etching of Si02 over Si is a basic problem in semiconductor technology. In a pure CF4 discharge excited with RF power, Si and Si02 are etched at very similar rates.…”

Automatic rotating element ellipsometers: Calibration, operation, and real-time applications

“…61, No.8, August 1990 It should be noted that in these studies of a-SiC :H), nucleation models were developed by guessing a reasonable geometry for the evolution of the initial film microstructure, then calculating simulated single photon energy data from the guess, and varying free parameters (e.g., the island spac~ ing and roughness thickness) to fit the features in the data. 134,151,and 152) has been characterized. This is of particular value in the study of the growth of polyor microcrystalline films in which the microstructural evolution tends to be more complex, as observed initially by Hottier and Cadoret for polycrystalline Si deposited by lowpressure CVD,138 and later by Collins l3') and by for microcrystalline Si grown by plasma-assisted CVD.…”