The investigation for various treatments of InAlGaP Schottky diodes

Lee, Hsin Ying; Lee, Ching-Ting

doi:10.1016/s0925-3467(03)00067-3

Cited by 10 publications

(6 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The wider band gap semiconductor In 0.5 (Al x Ga 1−x ) 0.5 P(x ≥ 0.2) lattice matched to a GaAs system is found to be a promising material (Lee et al 2002).…”

Section: Materials Selection and Specifications For Different Layersmentioning

confidence: 99%

“…The thickness of top cell is also higher for terrestrial applications. To produce optical transparency and Table 1 Major parameters for the ternary In 0.49 Ga 0.51 P, Al 0.7 Ga 0.3 As and quaternary In 0.5 (Al 0.7 Ga 0.3 ) 0.5 P lattice matched to GaAs materials used in this design (Vurgaftman et al 2001;SILVACO 2009;Lee et al 2002 The actual effective mass of an electron as explained in reference Lundstrom and Shuelke (1983) is given as sum of light e-effective mass and heavy e-effective mass maximum current conductivity between the top and bottom cells in monolithic multi-junction devices, all layers must have similar crystal, or lattice structures. It is extremely desirable to match the lattice constants of the various layers.…”

Section: Materials Selection and Specifications For Different Layersmentioning

confidence: 99%

See 1 more Smart Citation

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

Singh¹,

Sarkar

2011

Opt Quant Electron

View full text Add to dashboard Cite

An effective BSF is a key structural element for an efficient solar cell, either in a multi-junction or in a single-junction device. In this paper, two important materials AlGaAs and InAlGaP with their varied thickness (i.e. 0.05-1.0) μm both for top BSF and bottom BSF cells are investigated using the computational numerical modeling TCAD tool Silvaco ATLAS. It has been found that under the current matching condition with the relatively thinner (30 nm) top BSF layer and the thicker (1,000 nm) bottom BSF layer, the cell exhibit an overall enhancement of short-circuit current density J sc and open circuit voltage Voc thereby improving the overall efficiency of the cell. A wide band gap material In 0.5 (Al 0.7 Ga 0.3 ) 0.5 P is proved to be a better choice for both window and BSF layer by increasing 6.2% more efficiency than using other widely used Al 0.7 Ga 0.3 As material under the same cell configuration because of its high photo generation rate. For this optimized cell structure, the maximum J sc = 16.10 mA/cm 2 , V oc = 2.392 V, and fill factor = 87.52% are obtained under AM1.5G illumination, exhibiting a maximum conversion efficiency of 32.1964% (1 sun) and 36.6781% (1,000 suns). This work reports the Influence of different BSF material and structures on the characteristics and efficiency of Multi-Junction solar cells. The detail photo-generation rates and EQE in this optimized ARC less DJ solar cell structure are also observed. The major stages of the modeling are explained and the simulation results are validated with published experimental data to demonstrate the accuracy of our results produced by the model utilizing this technique.

show abstract

“…The wider band gap semiconductor In 0.5 (Al x Ga 1−x ) 0.5 P(x ≥ 0.2) lattice matched to a GaAs system is found to be a promising material (Lee et al 2002).…”

Section: Materials Selection and Specifications For Different Layersmentioning

confidence: 99%

Section: Materials Selection and Specifications For Different Layersmentioning

confidence: 99%

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

Singh¹,

Sarkar

2011

Opt Quant Electron

View full text Add to dashboard Cite

show abstract

“…Metal/semiconductor (MS) contacts structures are basic devices in technology [1] and the most commonly used rectifying contacts play an important role in the electronic and optoelectronic industry [2][3][4][5]. Especially, gallium phosphide (GaP) surface has been less studied than GaAs or InP surfaces as III-IV compounds [6].…”

Section: Introductionmentioning

confidence: 99%

“…GaP is an amazing III-V semiconductor which has potential high-temperature applications because of its rather wide band gap (2.25 eV) [7,8]. Therefore, GaP used to fabricated photodiodes, in visible light emission diodes (LEDs) and field effect transistor (FET) [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

Orak

Ejderha

Sönmez

et al. 2015

Materials Research Bulletin

View full text Add to dashboard Cite

“…51 P) and quaternary In 0.5 (Al 0 . 7 Ga 0.3 ) 0.5 P lattice matched to GaAs materials used in this design[11][12][13][14].…”

mentioning

confidence: 99%

Introducing a novel high-efficiency arc less heterounction DJ solar cell

Abasian

Sabbaghi‐Nadooshan

2018

FACTA U EE

View full text Add to dashboard Cite

The present study was undertaken to examine the structure and performance of hetero junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual-junction solar cell. This goal of this work was to reduce recombination in the bottom cell so that the electrons and holes produced in the top cell with the lowest recombination participate in the output current. Semiconductors with a high bandwidth from the ѵш group were studied in order to obtain a high open circuit voltage. By observing mobility and lattice constant semiconductors (Al 0.52 In 0.48 P, GaAs and In 0. 49 Ga 0. 51 P), it was concluded that the semiconductor Al 0.52 In 0.48 P has high electron mobility and hole mobility and that the lattice constant matched to the GaAs semiconductor can be effective in reducing recombination. The cathode current and absorbed photons show that the composition InGaP/AlInP increased the number of charge carriers in the top cell. The structure of InGaP-AlInP/GaAs-AlInP was obtained by inserting an InGaP-AlInP heterojunction at the top and GaAs-AlInP heterojunction at the bottom of aInGaP/GaAs dual-junction cell. For this structure, short circuit current (J SC) = 22.96 mA/cm 2 , open circuit voltage (Voc) = 2.72 V, fill factor (FF) = 93.26% and efficiency(η)= 58.28% were obtained under AM1.5 (1 sun) of radiation.

show abstract

The investigation for various treatments of InAlGaP Schottky diodes

Cited by 10 publications

References 10 publications

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

Introducing a novel high-efficiency arc less heterounction DJ solar cell

Contact Info

Product

Resources

About