The investigation of an amorphous SiOx system for charge storage applications in nonvolatile memory at low temperature process

Duy, Nguyễn Văn; Jung, Sungwook; Nga, Nguyen Thanh; Son, Dang Ngoc; Cho, Jaehyun; Lee, Sunhwa; Lee, Wonbaek; Yi, Junsin

doi:10.1016/j.mseb.2010.07.009

Cited by 13 publications

(9 citation statements)

References 16 publications

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“…Using the values of the absorption coefficient (α), we estimate the band gap energy (BG) using the Tauc relation [ 26 ] where the BG was obtained using linear regression considering the equation

where α is the absorption coefficient,

is the energy of the impinging photon,

is the BG, and A is an arbitrary constant. We also choose the exponent ½, which corresponds to an indirect allowed transition according to what other authors have used [ 27 , 28 ] for this material.…”

Section: Resultsmentioning

confidence: 99%

Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD

et al. 2020

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In the present work, non-stoichiometric silicon oxide films (SiOx) deposited using a hot filament chemical vapor deposition technique at short time and simple parameters of depositions are reported. This is motivated by the numerous potential applications of SiOx films in areas such as optoelectronics. SiOx films were characterized with different spectroscopic techniques. The deposited films have interesting characteristics such as the presence of silicon nanoclusters without applying thermal annealing, in addition to a strong photoluminescence after applying thermal annealing in the vicinity of 1.5 eV, which may be attributed to the presence of small, oxidized silicon grains (less than 2 nm) or silicon nanocrystals (Si-nc). An interesting correlation was found between oxygen content, the presence of hydrogen, and the formation of defects in the material, with parameters such as the band gap and the Urbach energies. This correlation is interesting in the development of band gap engineering for this material for applications in photonic devices.

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where α is the absorption coefficient,

is the energy of the impinging photon,

Section: Resultsmentioning

confidence: 99%

Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD

et al. 2020

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“…The SiO x films showed the existence of Si-O bending and were assigned to dangling oxygen bonds (NBOHC) at the peaks around 860 cm −1 . These NBOHC defects were the source of deep trap states to hold injected charges from the active layer [22]. The SiO x storage layer also showed an assignment of Si-H bondings of HSi 3 O, HSi 2 O 2 , H 2 SiO 2 , and HSiO 3 at peaks around 2100-2300 cm −1 [23,24].…”

Section: Itzo-based Nvm Devicesmentioning

confidence: 96%

“…These results confirmed that the rich silicon for the charge storage layer had a strong influence on the memory characteristics of the NVM devices. For Si-rich SiO x , many shallow traps and deep traps in the matrix existed [22,23] and they were accessible for the electrons injected from the surface [26]. As a result, NVM devices which used Si-rich SiO x showed high program efficiency.…”

Section: Itzo-based Nvm Devicesmentioning

confidence: 99%

High performance non-volatile memory with the control of charge trapping states in an amorphous InSnZnO active channel

Nguyen¹,

Trinh²,

Raja³

et al. 2015

Semicond. Sci. Technol.

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In this study, the influence of interface states between an indium tin zinc oxide (ITZO) active layer and a gate insulator on memory characteristics was examined as a function of annealing temperature. The annealing nonvolatile memory (NVM) devices have shown the best electrical characteristics such as high field effect mobility (27.22 cm 2 V −1 s −1 ), low threshold voltage (0.15 V), low subthreshold slope (0.17 V dec −1 ), and high on/off current ratio (7.57 × 10 7 ) in comparison with as-deposited devices. By annealing at 250 °C, the number of ITZO/insulator interface trap densities was reduced. The effect of the remaining trap states on the retention characteristic of memory devices is negligible. The performance of NVM devices using different annealing temperatures of ITZO and a multi-stack gate insulator SiO 2 /SiO x /SiO x N y with Si-rich SiO x for the charge storage layer was also reported. The 250 °C annealed ITZO-based NVM device showed a retention exceeding ∼94% of the threshold voltage shift after 10 4 s and greater than ∼90% after 10 years with a low operating voltage of +11 V at only 1 μs programming duration time. Therefore, the NVM devices, which were fabricated by the low ITZO/insulator interface trap densities, were highly suitable for potential application in memory systems.

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“…The Si-rich SiO x layer exists in the amorphous silicon (a-Si) phase of the base material. This is a source of the deep traps which enhance the charge storage capacity of NVM devices [5,17,18]. Besides, the triple-stack of blocking/ storage/tunneling layers is deposited in the same system.…”

Section: Introductionmentioning

confidence: 99%

Improvement of the storage ability of Si-rich oxide layer in poly-Si based nonvolatile memory devices by implementation of taguchi method

Nguyen

Manh

et al. 2019

Semicond. Sci. Technol.

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The storage ability of silicon-rich silicon oxide (Si-rich SiO x ) floating gates plays a critical role in poly-Si nonvolatile memory devices. In this study, the Taguchi method, a statistical means of experimental design which allows for the optimization of the storage characteristics with a dramatic reduction in the number of experiments by approximately 90%, is used. The memory window of the metal insulator semiconductor devices is used as a figure of merit to find out the optimal process parameters. Furthermore, the analysis of variance showed that the substrate temperature is the dominant factor affecting the memory characteristics of the SiO x storage layers. A significant improvement in the performance of poly-Si nonvolatile memory devices using the optimal Si-rich SiO x as a charge storage layer was observed. These devices show retention of the threshold voltage shift exceeding ∼98% after 10 4 s and ∼96% after 10 years extrapolation with programming/erasing voltages of −12 V/+11 V at a low duration of 1 μs. Therefore, the poly-Si based nonvolatile memory devices using Si-rich SiO x as a storage layer show a high potential for memory system applications.

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The investigation of an amorphous SiOx system for charge storage applications in nonvolatile memory at low temperature process

Cited by 13 publications

References 16 publications

Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD

Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD

High performance non-volatile memory with the control of charge trapping states in an amorphous InSnZnO active channel

Improvement of the storage ability of Si-rich oxide layer in poly-Si based nonvolatile memory devices by implementation of taguchi method

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