The K2S2O8–KOH photoetching system for GaN

Weyher, J.L.; Tichelaar, F.D.; Dorp, Dennis H. van; Kelly, J. J.; Khachapuridze, A.

doi:10.1016/j.jcrysgro.2010.04.020

Cited by 62 publications

(55 citation statements)

References 21 publications

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“…The samples were n-type, non-intentionally doped with residual impurities (oxygen and carbon) and Si-doped with carrier concentration in the range of 1 Â 10E17 À 1 Â 10E18 cm À 3 . The samples were etched under illumination of 450 W UV-enhanced xenon lamp in KSO-D solution (0.02 M K 2 S 2 O 8 + 0.02 M KOH solution as mentioned in [12]). Photo-etching was performed in electroless conditions (no Ti contact layers to the samples were used).…”

Section: Methodsmentioning

confidence: 99%

“…The samples after etching were examined using differential interference contrast (DIC) optical microscopy and SEM. Carrier concentration differences across extended defects were qualitatively estimated using surface profiling with Tencor Alpha-Step on the base of previously established relationship between etch depth and carrier concentration from Raman measurements [12,13]. Some defects revealed by KSO-D etching were examined by conventional transmission electron microscopy and high resolution (HRTEM) imaging after preparing cross-sectional, electron transparent foils by polishing and subsequent Ar-ion milling.…”

Section: Methodsmentioning

confidence: 99%

“…This is equivalent to the change of carrier concentration. Following the relationship between the etch depth and carrier concentration obtained from Raman measurements on similarly etched samples [12,13], it is now possible to establish in a semiquantitative way the relative carrier concentration (N) in the neighboring areas from simple etch depth (P) profiling. The relative carrier concentrations in the areas with different etch depth P 1 4P 2 4P 3 are described as n on + on + + .…”

Section: Growth Striations and Abrupt Changes Of Electrical Propertiementioning

confidence: 99%

“…Dislocations were thoroughly studied both on Ga-polar surfaces and on non-polar planes [1][2][3][4]7,8] while axial homogeneity received some attention only recently [5,[9][10][11]. In this work we focus on revealing and analysis of extended defects and axial non-homogeneities using sensitive photo-etching method [12] on Ga-polar and on non-polar surfaces of quasi-bulk GaN crystals.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Revealing extended defects in HVPE-grown GaN

Weyher

Łucznik

Grzegory

et al. 2010

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Growth Striations and Abrupt Changes Of Electrical Propertiementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Revealing extended defects in HVPE-grown GaN

Weyher

Łucznik

Grzegory

et al. 2010

Journal of Crystal Growth

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“…After KPFM examination photo-etching was performed using recently introduced KSO-D solution (KOH-K 2 S 2 O 8 -H 2 O etching system for GaN) [19]. For photo-etching of GaN in KOH aqueous solutions the exponential relationship between carrier concentration and etch rate was experimentally established [14].…”

Section: Methodsmentioning

confidence: 99%

Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching

Nowak¹,

Weyher²,

Khachapuridze³

et al. 2012

Journal of Crystal Growth

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Defect sensitive etching of nitrides: appraisal of methods

Weyher

2011

Cryst. Res. Technol.

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Defect selective etching methods used for structural characterization of nitrides (GaN, AlGaN, InGaN and AlN) single crystals and epitaxial layers are summarized. The mechanism of surface reactions during orthodox chemical etching and photoetching is briefly described. Examples of defects which can be revealed mainly in bulk and epitaxial GaN using different etching systems are shown together with schematic models of defects. Special attention is given to selective etching and analysis of complex electrically active non‐homogeneities in bulk and HVPE‐grown GaN, which show up as areas of different etch rate, i.e. different carrier concentration. These defects are clearly visible after photo‐etching on both Ga‐polar surface and on any non‐polar cleavage plane. Ultra high selectivity of electroless photoetching on electrically active defects is explained by separation of photocurrent‐potential plots of areas with different carrier concentration. Formation of nano‐pillars on dislocations during photoetching is explained by recombinative properties of linear defects for photo‐generated carriers. Special applications of defect‐selective etching methods for (i) nano‐patterning of GaN surface for preparing highly efficient platforms for surface enhanced Raman spectroscopy (SERS) measurements and (ii) overgrowth of deep etch pits for reduction of dislocation density during HVPE growth of thick GaN crystals is also demonstrated. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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The K2S2O8–KOH photoetching system for GaN

Cited by 62 publications

References 21 publications

Revealing extended defects in HVPE-grown GaN

Revealing extended defects in HVPE-grown GaN

Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching

Defect sensitive etching of nitrides: appraisal of methods

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