The lateral outward growth of single-crystal diamonds by two different structures of microwave plasma reactor

Abstract

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

Effective diamond deposition on Ti:sapphire with a Cr interlayer via microwave plasma chemical vapor deposition

“…Recently, many studies have reported that diamond exhibits an advanced thermal management capability for various applications owing to its exceptional thermal conductivity, which is the highest at room temperature, of approximately 2000 W m −1 K −1 . [1][2][3][4][5] High-power lasers are of great scientific interest and technological significance in modern industrial applications. [6][7][8] Meanwhile, thermal issues in the application of high-power lasers are a major concern.…”

Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder

“…As a result, the seed growth may still be affected by the plasma concentration at the edges, resulting in the appearance of a polycrystalline diamond rim. [13,16,17] In this study, the relationship between the spatial location and growth mode of diamond seeds in an enclosed-type holder is explored. The preferred growth region is obtained to achieve relatively stable and repeatable growth.…”