The mechanism of dual schottky magnetodiode

Phetchakul, Toempong; Luanatikomkul, Wittaya; Yamwong, Wittawat; Poyai, Amporn

doi:10.1109/ecticon.2012.6254188

Cited by 4 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Even though all injected current is deflected but just only partial current (W Aeffective ) can travel to opposite cathode. The output response ∆I D [2] is defined as…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

The Effect of Anode Width of Dual Schottky Magnetodiode to Sensitivity

Phetchakul¹,

Luanatikomkul²,

Poyai³

2015

AMM

View full text Add to dashboard Cite

This article studies the effect of anode width of dual schottky magnetodiode to sensitivity. The width is varied at 5, 15 and 35 μm with the forward bias 0.2 mA and reverse bias 0.25 nA. The applied magnetic field is varied from -0.4 T - 0.4 T. The output response DID is the cathode current difference. The best relative sensitivity SR is 54.6 mT-1 in the case of reverse bias at WA= 5 μm. The worst SR is 26.9 mT-1in the case of forward bias at WA= 35 μm. It depends on the ratio of the distance of deviation current in Y direction (DY) to the width of anode WA. It shows that the width WA should be design as narrow as possible and the operating current should be kept as low as one can. The current density from simulation can explain the mechanism of the device.

show abstract

“…Even though all injected current is deflected but just only partial current (W Aeffective ) can travel to opposite cathode. The output response ∆I D [2] is defined as…”

Section: Resultsmentioning

confidence: 99%

“…The dual schottky magnetodiode had been proposed by the authors [1] and the mechanism also had presented [2]. Even though it is similar to p-n junction structure but the electron injected from semiconductor to metal is more complex than hole injected from p-type to n-type.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Anode Width of Dual Schottky Magnetodiode to Sensitivity

Phetchakul¹,

Luanatikomkul²,

Poyai³

2015

AMM

View full text Add to dashboard Cite

show abstract

“…This device can operate in forward and reverse bias. The output response I D is defined as [5] I D = J px .d. ∆Y (1) where ∆Y is the distance of deviation current in Y direction due to Lorentz's force and d is the depth of current in bulk.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

“…The early proposed magneto diode [1][2][3] is the device that uses surface recombination instead of Hall Effect. Dual magneto diode [4,5] is the magnetic sensor that uses the Hall Effect current mode basically. The structure is the common anode of two diodes that separated two cathodes.…”

Section: Introductionmentioning

confidence: 99%

Multi-sensor diode for magnetic field and photo detection

Sutthinet

Phetchakul

Luanatikomkul

et al. 2015

10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

View full text Add to dashboard Cite

This research presents the multi-sensor that can detect both magnetic field and photo in the one device. The structure is based on p-n junction diode that is the fundamental of light detecting. The idea is how to design p-n junction for magnetic field. The dual magneto diode structure is a solution. It is designed to be suitable for these purposes. The device is specially designed and simulation by Sentaurus TCAD. It is fabricated by standard CMOS process and measured the responses of magnetic field and light. It shows a good device that detects two types of energy equally well. The relative sensitivity of magnetic response is 57 mT -1 at forward bias 1 mA and 128 mT -1 at reverse 8 nA. The dark current of device is 7.34 mA at standard test condition (25ºC, AM 1.5, 100 W/m2). It is current mode device generating photo current and cathode current difference that is linearly induced from magnetic field.

show abstract