The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications

Ishutkin, S. V.; Arykov, Vadim S.; Yunusov, Igor; Stepanenko, Mikhail; Smirnov, V.; Troyan, P. E.; Zhidik, Yury

doi:10.3390/mi12121535

Cited by 9 publications

(9 citation statements)

References 25 publications

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“…The typical substrate temperature range for ICP etching of InP in a Cl2-based plasma is 150-200 °C. This range is necessary because low-volatility InClx components [22]; (b) SEM image showing the stack of WG, buried oxide layer, and silicon substrate, adapted from [22], (c) SEM micrograph of the ridge WG to strip-loaded slot WG transition region, adapted from [22]; (d) SEM images of the WG structure formed in the p-i-n InP/InGaAsP heterostructure, adapted from [23]; (e) SEM image of the ring resonator structure based on multiple slot WGs, adapted from [24]; (f) ring resonator structure based on the LNOI platform, adapted from [25]; and (g) the SEM image of the Y-junction on polymer WG, adapted from [26].…”

Section: Indium Phosphidementioning

confidence: 99%

“…The use of chlorine methods is constrained by the requirement to warm the substrate. In [23], it is explained that to ICP etch an InP/InGaAsP heterostructure involves using a Cl 2 /Ar/N 2 gas combination, as shown in Figure 2d [23]. The cyclic etching of the heterostructure without prior heating is a characteristic of the developed approach.…”

Section: Indium Phosphidementioning

confidence: 99%

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Integrated Optics: Platforms and Fabrication Methods

Butt

2023

Encyclopedia

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Integrated optics is a field of study and technology that focuses on the design, fabrication, and application of optical devices and systems using integrated circuit technology. It involves the integration of various optical components, such as waveguides, couplers, modulators, detectors, and lasers, into a single substrate. One of the key advantages of integrated optics is its compatibility with electronic integrated circuits. This compatibility enables seamless integration of optical and electronic functionalities onto the same chip, allowing efficient data transfer between optical and electronic domains. This synergy is crucial for applications such as optical interconnects in high-speed communication systems, optical sensing interfaces, and optoelectronic integrated circuits. This entry presents a brief study on some of the widely used and commercially available optical platforms and fabrication methods that can be used to create photonic integrated circuits.

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Section: Indium Phosphidementioning

confidence: 99%

Section: Indium Phosphidementioning

confidence: 99%

Integrated Optics: Platforms and Fabrication Methods

Butt

2023

Encyclopedia

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“…Here, n is the unit normal vector pointing towards the electrode surface. The first term in (9) indicates the Maxwellian flux of the electrons to the surface and the second term is the secondary electron emission flux of the electrons from the surface.…”

Section: Numerical Modelmentioning

confidence: 99%

“…The convective heat transfer from the plasma bulk to the reactors walls and to the wafer may also change the conditions for plasma processing. For instance, it is known that the InP/InGaAsP is etched most efficiently only in the narrow temperature range, 150 • C-200 • C [9]. Therefore, the gas heating could significantly influence the etching environment.…”

Section: Introductionmentioning

confidence: 99%

Gas heating by inductively coupled low-pressure chlorine process plasmas

Levko,

Subramaniam,

Raja

2023

Plasma Sources Sci. Technol.

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The mechanism of gas heating in low-pressure inductively coupled chlorine plasma is analyzed using a self-consistent two-dimensional axisymmetric fluid plasma model that is coupled with the compressible Navier–Stokes equations. For gas pressures of 10 and 20 mTorr and the discharge power in the range 0.1–1.3 kW, the main reactions contributing to gas heating were the ion–ion recombination reactions and the quenching of electronically excited chlorine atoms. At the same time, the energy released by the electron impact dissociation reaction of molecular chlorine is negligible due to its high degree of dissociation within the plasma bulk. The comparison between the results of our simulations and the fitting equation proposed in the literature show qualitative agreement, although there is significant quantitative discrepancy.

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“…More recently, etching of InP/InGaAsP heterostructures using low‐temperature Cl 2 ‐based chemistries has been reported. [ 74 ]…”

Section: Iii–v Lasers On Siliconmentioning

confidence: 99%

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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including high refractive index contrast with its oxide material, low loss at communication wavelength regime, and significant thermo-optic coefficient for tuning. Contributed by these advantages, various photonic components have been demonstrated on integrated Si photonics platform, including mode couplers, [3][4][5][6] tunable filters, [7][8][9][10] and optical modulators. [11][12][13][14] However, Si itself is an indirect bandgap material, which limits its light emission efficiency. Laser sources on Si remain to be the challenging component for photonics integration. The requirements of an integrated laser source not only cover laser performance parameters such as optical power, threshold, pumping scheme, and stability, but also low-cost and high-volume production. Researchers are trying to come up with different ways to integrate lasers on Si. The most common way is to integrate III-V lasers on Si photonics platform, through bonding integration or direct growth approach. Alternatively, group IV materials such as germanium (Ge) and germanium tin (GeSn) alloy-based lasers show promise, with significant research progress in the past decade. Raman effect has also been explored to demonstrate lasers on Si. Such kind of laser enables lasing from the Si material itself and has drawn a lot of interest in the research community. Also, rare earth (RE) elements can be doped within photonics layer to make lasers on Si, which is similar to the idea of RE-doped optical fiber laser. RE-doped laser has the advantage of low noise and high thermal stability. Comprehensive reviews on Si-integrated lasers were published more than 6 years ago. [15,16] In the meanwhile, to the best of our knowledge, the review for the most recent progress on Siintegrated lasers covering the above-mentioned approaches is still lacking.In this review, we have summarized the recent development progress of lasers integrated on Si in the past two decades, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III-V semiconductor laser, Ge/GeSn laser, Si-based Raman laser, and RE-doped laser on Si. For III-V laser, different integration approaches are discussed, covering flip-chip integration, transfer printing integration, hybrid bonding, and direct growth method. The review is organized in the following way: it starts from background information as presented in Section 1. III-V laser, Ge/GeSn laser, Raman laser, and RE-doped laser

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The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications

Cited by 9 publications

References 25 publications

Integrated Optics: Platforms and Fabrication Methods

Integrated Optics: Platforms and Fabrication Methods

Gas heating by inductively coupled low-pressure chlorine process plasmas

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

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