The Meyer–Neldel rule for a property determined by two transport mechanisms

Widenhorn, Ralf; Rest, A.; Bodegom, Erik

doi:10.1063/1.1469666

Cited by 47 publications

(39 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, in amorphous silicon, the rule has been attributed to the temperature dependence of Fermi energy and to the diminution of the band gap with increases of temperature [14]. Widenhorn [15] and coworkers propose that the MN rule arises for a thermally activated property when both, intrinsic and extrinsic processes involving impurities, contribute. In this case the property is considered the sum of two thermally activated mechanisms which can cause a spread in the effective activation energy.…”

Section: Discussionmentioning

confidence: 99%

Meyer-Neldel Rule in Plasma Polythiophene Thin Films

Palacios¹,

Olayo²,

Cruz³

et al. 2014

OJPChem

View full text Add to dashboard Cite

In polymers, the electronic activation energy depends on the fragmentation, crosslinking, dopants, moisture and in general on the structure-environment interaction. This has a special importance in plasma polymers because fragmentation and crosslinking are usually higher than in other polymers. In this work, DC electrical conductivity of polythiophene thin films prepared by plasma (pPTh) was studied using the Meyer-Neldel (MN) rule to calculate the characteristic MN energy and temperature as a function of moisture and metallic dopants. The experimental data for pPTh synthesized in different conditions indicated that EM = 32 meV and T M = 373 K, suggesting a thermally activated conduction mechanism; however, in polymer-metal matrices with metal concentration higher than the percolation threshold, the conduction mechanism is different causing that the MN rule was only partially fulfilled. The congruence of the experimental data with the multiexcitation entropy model is discussed.

show abstract

Section: Discussionmentioning

confidence: 99%

Meyer-Neldel Rule in Plasma Polythiophene Thin Films

Palacios¹,

Olayo²,

Cruz³

et al. 2014

OJPChem

View full text Add to dashboard Cite

show abstract

“…In context of multiple trapping dominated charge transport it was associated with the presence of the exponential distribution of traps. [12][13][14][15][16] Widenhorn et al 17 argue that the MNR arises for an arbitrary system where an intrinsic rate process as well as an impurity related process both contributes while Yelon and Movaghar 18 suggest that the MNR is obeyed when a thermally activated process requires a large number of individual excitations which increase the entropy. Recently, Emin 19 advanced an adiabatic polaron hopping model that considers carrierinduced softening of the vibrations upon electron motion and showed that this brings up the MNR.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the charge carrier mobility in disordered organic semiconductors at large carrier concentrations

et al. 2010

View full text Add to dashboard Cite

Temperature-activated charge transport in disordered organic semiconductors at large carrier concentrations, especially relevant in organic field-effect transistors ͑OFETs͒, has been thoroughly considered using a recently developed analytical formalism assuming a Gaussian density-of-states ͑DOS͒ distribution and MillerAbrahams jump rates. We demonstrate that the apparent Meyer-Neldel compensation rule ͑MNR͒ is recovered regarding the temperature dependences of the charge carrier mobility upon varying the carrier concentration but not regarding varying the width of the DOS. We show that establishment of the MNR is a characteristic signature of hopping transport in a random system with variable carrier concentration. The polaron formation was not involved to rationalize this phenomenon. The MNR effect has been studied in a OFET based on C 60 films, a material with negligible electron-phonon coupling, and successfully described by the present model. We show that this phenomenon is entirely due to the evolution of the occupational DOS profile upon increasing carrier concentration and this mechanism is specific to materials with Gaussian-shaped DOS. The suggested model provides compact analytical relations which can be readily used for the evaluation of important material parameters from experimentally accessible data on temperature dependence of the mobility in organic electronic devices. Experimental results on temperature-dependent charge mobility reported before for organic semiconductors by other authors can be well interpreted by using the model presented in this paper. In addition, the presented analytical formalism predicts a transition to a Mott-type charge carrier hopping regime at very low temperatures, which also manifests a MNR effect.

show abstract

“…We showed that such a change in the activation energy can explain the observation of the MNR. 11 The origin of the shift in the activation energy with changing temperature for dark current in a CCD will be discussed in the next section.…”

Section: The Meyer-neldel Rule For Dark Current In a Ccdmentioning

confidence: 99%

<title>Temperature dependence of dark current in a CCD</title>

Widenhorn

Blouke²,

Weber

et al. 2002

SPIE Proceedings

Self Cite

View full text Add to dashboard Cite

We present data for dark current of a back-illuminated CCD over the temperature range of 222 to 291 K. Using an Arrhenius law, we found that the analysis of the data leads to the relation between the prefactor and the apparent activation energy as described by the Meyer-Neldel rule. However, a more detailed analysis shows that the activation energy for the dark current changes in the temperature range investigated. This transition can be explained by the larger relative importance at high temperatures of the diffusion dark current and at low temperatures by the depletion dark current. The diffusion dark current, characterized by the band gap of silicon, is uniform for all pixels. At low temperatures, the depletion dark current, characterized by half the band gap, prevails, but it varies for different pixels. Dark current spikes are pronounced at low temperatures and can be explained by large concentrations of deep level impurities in those particular pixels. We show that fitting the data with the impurity concentration as the only variable can explain the dark current characteristics of all the pixels on the chip.

show abstract

The Meyer–Neldel rule for a property determined by two transport mechanisms

Cited by 47 publications

References 30 publications

Meyer-Neldel Rule in Plasma Polythiophene Thin Films

Meyer-Neldel Rule in Plasma Polythiophene Thin Films

Temperature dependence of the charge carrier mobility in disordered organic semiconductors at large carrier concentrations

<title>Temperature dependence of dark current in a CCD</title>

Contact Info

Product

Resources

About