The new dry method of mask (relief) formation by direct electron-beam etching of resist

Bruk, M.A.; Zhikharev, E. N.; Streltsov, D. R.; Kal’nov, V. A.; Spirin, A. V.

doi:10.1016/j.mee.2013.06.003

Cited by 9 publications

(4 citation statements)

References 9 publications

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“…Spraying, atomizing, spin coating, dispensing e self-assembly of biomimetic isotropic films are achieved with a characteristic length-scale comparable to the wavelength of visible light [120] Self-assembled photonic crystals by magnetic field force Magnetic particles and nanospheres (silica [121], polystyrene [122], carbon [123], polyvinylpyrrolidone [124], polyacrylamide [125]) Monodisperse microspheres self-assemble into ordered structures under the action of a magnetic field e self-assembly process is reversible, and the band gap position can also be adjusted by controlling the strength of the magnetic field Self-assembled photonic crystals by gravity Monodisperse microspheres with higher density such as silica [126] Colloidal particles are free to settle and self-assemble into an ordered structure in constant temperature, humidity and vapor pressure environment [127] e photonic crystal obtained by the gravity is difficult to control and is prone to defects [131] Electron beam etching PMMA (positive rubber) and SU-8 (negative rubber) materials [132] Polymer in the region exposed to the electron beam will undergo a soluble change, and the micro-nano structure can be obtained by the developer ere is no need to contact the surface of the material, the deformation is small under stress, and the pollution is less, and the surface of the material is not [86] or ultraviolet irradiation [84,85] e resolution is not affected by the most exposed wavelength, and is closely related to the original template resolution. It has high fidelity, high resolution, low cost and high yield Surface wrinkle technology PDMS [134], polystyrene [135] and shape memory materials [136][137][138][139] are used as base materials, organic polymer materials [140], metal materials [141], and inorganic materials [142] can be used as surface hard layer materials Surface instability factors are induced by heat, force, electromagnetic field, humidity, phase separation, osmotic pressure, capillary force and polymerization…”

Section: Characteristicmentioning

confidence: 99%

Functional Micro–Nano Structure with Variable Colour: Applications for Anti-Counterfeiting

Liu¹,

Xie²,

Shen³

et al. 2019

Advances in Polymer Technology

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Colour patterns based on micro-nano structure have attracted enormous research interests due to unique optical switches and smart surface applications in photonic crystal, superhydrophobic surface modification, controlled adhesion, inkjet printing, biological detection, supramolecular self-assembly, anti-counterfeiting, optical device and other fields. In traditional methods, many patterns of micro-nano structure are derived from changes of refractive index or lattice parameters. Generally, the refractive index and lattice parameters of photonic crystals are processed by common solvents, salts or reactive monomers under specific electric, magnetic and stress conditions. This review focuses on the recent developments in the fabrication of micro-nano structures for patterns including styles, materials, methods and characteristics. It summarized the advantages and disadvantages of inkjet printing, angle-independent photonic crystal, self-assembled photonic crystals by magnetic field force, gravity, electric field, inverse opal photonic crystal, electron beam etching, ion beam etching, laser holographic lithography, imprinting technology and surface wrinkle technology, etc. This review will provide a summary on designing micro-nano patterns and details on patterns composed of photonic crystals by surface wrinkles technology and plasmonic micro-nano technology. In addition, colour patterns as switches are fabricated with good stability and reproducibility in anti-counterfeiting application. Finally, there will be a conclusion and an outlook on future perspectives.

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Section: Characteristicmentioning

confidence: 99%

Functional Micro–Nano Structure with Variable Colour: Applications for Anti-Counterfeiting

Liu¹,

Xie²,

Shen³

et al. 2019

Advances in Polymer Technology

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“…As a result, molecules of terminal macroradicals are formed. These macroradicals at increased temperatures split off monomer molecules one by one with "zipper" mechanism [2,10]. Lots of monomer molecules are evacuated during exposure.…”

Section: Fig 1 Dry E-beam Etching Of Resist Process Schemementioning

confidence: 99%

“…al. [1,2] could be used for formation of wide range of optoelectronic and photonic structures. The method is based on the chain depolymerization reaction, which takes place in the polymer resists during e-beam exposure at the glass-transition or higher temperatures.…”

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confidence: 99%

Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins

Rogozhin¹,

Bruk²,

Zhikharev³

et al. 2017

Computer Optics

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A wide range of structures for nanophotonics and optoelectronics can be formed by dry e-beam etching of the resist (DEBER). High resist sensitivity due to chain depolymerization reaction provides efficient etching with high throughput of the method. The structures obtained by the DEBER in this research are well-rounded diffraction gratings, binary gratings and staircase profiles. The major disadvantage of DEBER is poor lateral resolution, which may be caused by different physical mechanisms. Four groups of possible mechanisms leading to the resolution limitation are determined and the influence of some mechanisms is estimated Keywords: DEBER, e-beam etching, nanophotonics, diffractive optical elements, diffractive optics, three-dimensional lithography, three-dimensional fabrication, microlithography, optical design and fabrication.Citation: Rogozhin A, Bruk M, Zhikharev E, Sidorov F. Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins. Computer Optics 2016; 41(4): 499-503. DOI: 10.18287/2412DOI: 10.18287/ -6179-2017.Acknowledgments: This study was partially supported by the President of the Russian Federation's grant No. MK-3327.2017.9. IntroductionDry electron beam etching of resist (DEBER) proposed by Bruk et. al. [1,2] could be used for formation of wide range of optoelectronic and photonic structures. The method is based on the chain depolymerization reaction, which takes place in the polymer resists during e-beam exposure at the glass-transition or higher temperatures. The volatile reaction products (monomers) are pumped out during exposure. The method provides quite simple way for formation of well-rounded or 3D structures. In some cases, it could be much more flexible than usual methods, in others it could be more productive or convenient. Similar phenomena were observed in PMMA during ion beam irradiation [3] and UV radiation [4].PMMA sensitivity to e-beam in the DEBER method is about 100 times higher than that in the standard "wet" e-beam lithography process. Because of high vertical resolution (about 1 nm) the method could be used for high-precision 3D structuring. On the other hand, DEBER lateral resolution (about 200 nm) and contrast (0.7 -1.5) are rather low. It is difficult to use DEBER method for nanophotonic structure fabrication due to low lateral resolution. For nanophotonic applications the lateral resolution of the formation method should be lower than 100 nm [5,6].It is not clear which physical mechanism leads to the lateral resolution limitation. It seems that most of the possible mechanisms are the same for DEBER and ordinary e-beam lithography [7,8,9] but their contribution to the lateral resolution lowering should be reconsidered.In this paper structures of diffraction or binary gratings, some diffractive optical elements (DOE), 3D structures or planar photonic crystals obtained by DEBER method are presented. Also in the paper, different mechanisms that could lead to the broadening of the trenches

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“…С фактами подделки сталкиваются многие: производители оборудования, государственные органы выдачи паспортов и других документов, национальные банки, выпускающие денежные купюры, монеты, и др [11][12][13][14][15][16].…”

Section: Introductionunclassified

Research of nanoreliefs and stamps for holographic protection

Myrzabekova¹,

Гусейнов²,

Zhumabayev³

et al. 2020

Vest KazNRTU

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This article describes the creation and study of high quality reliefs and stamps. The thickness of the relief is 40 nm. The created nanoreliefs were investigated by optical and atomic force microscopy. Several methods have been tested for their creation: dry etching, nanolithography and nanoprinting. The developed technology for the transfer of nanoreliefs on various surfaces is distinguished by the obtained high resolution about 10 nm and low energies of the used electron beam 1-150 μC/cm2. The obtained finished reliefs can be used in mints in the form of a high level security holograms, in photolithography for the manufacture of masks, in the creation of rainbow holograms, holographic gratings.

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The new dry method of mask (relief) formation by direct electron-beam etching of resist

Cited by 9 publications

References 9 publications

Functional Micro–Nano Structure with Variable Colour: Applications for Anti-Counterfeiting

Functional Micro–Nano Structure with Variable Colour: Applications for Anti-Counterfeiting

Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins

Research of nanoreliefs and stamps for holographic protection

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