The numerical solution of poisson's equation for two-dimensional semiconductor devices

Brown, Gerald W.; Lindsay, B.W.

doi:10.1016/0038-1101(76)90177-5

Cited by 21 publications

(10 citation statements)

References 3 publications

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“…The electron density so obtained is fed to the Poisson solver to get the potential profile in the device [10], which uses Newton Raphson method to attain convergence. The process is repeated till a self consistent value for electron density is reached.…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…The channel length is varied from 10 nm to 24 nm in steps of 2 nm and channel thickness is varied from 2 nm to 5.6 nm in steps of 0.6 nm for studying the variation of DIBL, subthreshold swing (SS) and leakage current (IOFF) with change in channel length and thickness. Uniformly spaced grids are used in both xψ and yψ directions, for solving the Poisson equation and the NEGF equations using the finite difference method [10], [11]. …”

Section: Simulation Proceduresmentioning

confidence: 99%

See 1 more Smart Citation

Reduction of off-state leakage current on fully depleted DG-MOSFETs

Joseph¹,

James²,

Mathew³

2009

2009 International Conference on Emerging Trends in Electronic and Photonic Devices &Amp; Systems

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This paper will discuss the analysis and reduction of off-state leakage current on DG MOSFETs. We examine the influence of channel length (Lg) and channel thickness (Tsi) on device performance of nanoscale Double Gate (DG) MOSFETs, employing Non-equilibrium Green's function (NEGF) formalism. When the channel length is shrinks down, the electrostatic controllability of the gate over the channel decreases due to the increased charge sharing from source/drain. The present work provides design insights into the performance of nanoscale DG-MOSFET devices with optimal channel engineering and serves as a tool to optimize important device and technological parameters for 10−24 nm range.

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Section: Simulation Proceduresmentioning

confidence: 99%

Section: Simulation Proceduresmentioning

confidence: 99%

Reduction of off-state leakage current on fully depleted DG-MOSFETs

Joseph¹,

James²,

Mathew³

2009

2009 International Conference on Emerging Trends in Electronic and Photonic Devices &Amp; Systems

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“…As the gate voltage varies, the potential on the surface of carbon nanotube changes and this leads to the change of Schottky barriers and the transistor current. The nonlinear finite difference method is used to solve the Poisson equation [16,17], and the nonlinear set of equations has been solved by the Newton-Raphson technique. This method effectively reduces the iterations of solving the Poisson and the Schrödinger equations [17].…”

Section: Calculation Of Carrier Density and Currentmentioning

confidence: 99%

Noise analysis of coaxial Schottky barrier carbon nanotube fets using non equilibrium Green’s function formalism

et al. 2009

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Abstract:The effect of noise on the performance of Schottky Barrier Carbon Nanotube Field Effect Transistors (SBCNTFETs) has been investigated under various bias conditions. In order to calculate the noise power spectral density, the Non-Equilibrium Green's Function formalism (NEGF) is used to obtain the transmission coefficient and the number of carriers inside the channel. Results are presented in two sections: In the first section the Hooge's empirical rule is used to investigate the flicker noise properties of SB-CNTFETs with defects in the gate oxide region, while in the second section the thermal and shot noise properties of SB-CNTFETs are studied. Finally, the best bias points in the ON and OFF states have been suggested according to the total noise power spectral density and the device signal to noise ratio.

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“…For Poisson's equation, the boundary conditions are set to be as follows: (1) At the gate contacts, the gate vacuum potential is determined from the gate bias voltage and workfunction of the contact materials. (2) At the source/drain contacts and other open boundarys, the natural Neumann boundary conditions are imposed, which permit potentials to float to whatever values necessary to ensure the charge neutrality at these boundaries [3]. By using Newton iterative method with "fixed" quasi-Fermi level this numerical implementation has a gratifying convergence behavior.…”

Section: Model Descriptionmentioning

confidence: 99%

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices

Shao

2004

Simulation of Semiconductor Processes and Devices 2004

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In this paper, we have carried out a numerical simulation of FinFETs. The model is based on 1D non-equilibrium Green's function (NEGF) along the channel and 2-D Schrödinger equation in the confined cross section and provides insights into the performance of FinFETs with ultra small channel cross section. The simulation results of FinFETs show normal I-V characteristics with great potential in scalability even when the gate length is below 5 nm with 2-by-2 nm channel cross section.

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The numerical solution of poisson's equation for two-dimensional semiconductor devices

Cited by 21 publications

References 3 publications

Reduction of off-state leakage current on fully depleted DG-MOSFETs

Reduction of off-state leakage current on fully depleted DG-MOSFETs

Noise analysis of coaxial Schottky barrier carbon nanotube fets using non equilibrium Green’s function formalism

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices

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