The operation of the semiconductor-insulator-semiconductor solar cell: Experiment

Abstract

We have reported on the theory of semiconductor-insulator-semiconductor (SIS) solar cells in a previous publication. In this paper, the fabrication and properties of indium tin oxide/p-Si single-crystal solar cells will be described. The ITO is deposited by the ion-beam sputtering method. Best photovoltaic devices are obtained when the composition of indium tin oxide (ITO) is 91 mole% and 9 mole% SnO2. The device properties as a function of the ITO composition will be described. The thickness and the composition of the oxide-silicon interface is critical for device performance. The existence of a thin interfacial layer is demonstrated by Auger spectroscopy. The effect of temperature on device performance and the spectral response are compared with the theory. The SIS model accurately matches the major trends observed in experimental nITO/p-Si solar cells.

Communication—Anomalous Shift of the Capacitance-Voltage Characteristics Obtained for p-MOS Capacitors with a Tin-Doped Indium Oxide Gate

“…6,7 Normally the work function should be in the 4.1-4.8 eV range. [8][9][10][11] Moreover, a very sharp change of the flatband value in the 400-450…”

Synthesis of 3D ordered macroporous indium tin oxide using polymer colloidal crystal template

“…With special optical and electrical properties, ITO has been extensively used in a variety of electronics and optoelectronics applications including liquid crystal displays, electrochromic devices, heat reflecting mirrors, window heaters and solar cells, etc. [10][11][12] . Usually, the researchers pay their attention to the preparation of ITO powder and films, and so far there are no reports about synthesis of ordered macroporous ITO.…”

Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

“…Semiconductor-insulator-semiconductor (SIS) is also a type of heterojunction, which was first developed in the 1970s and achieves theoretically a maximum conversion efficiency of 25%. [17][18][19] A SIS junction consists of two semiconductors that are separated by a 1-3 nm thin dielectric layer. The charge carrier separation mechanism bases on a quantum mechanical tunneling of charge carriers through the dielectric barrier.…”

“…Typically, indium tin oxide (ITO) serves as TCO. 18,[20][21][22][23][24] Atomic layer deposition (ALD) is a modified chemical vapor deposition (CVD) technique and offers the possibility to deposit monolayer (ML) scale films of high uniformity, particularly on high aspect ratio structured surfaces. 25,26 Different conducting, semiconducting, and a large number of dielectric materials can be deposited by ALD.…”