The oxidation of surface layers during reactive ion etching of GaAs in CF2Cl2+O2 and O2 plasmas

Grigonis, A.; Galdikas, Arvaidas; Šilinskas, M.

doi:10.1016/s0169-4332(98)00530-3

Cited by 4 publications

(3 citation statements)

References 10 publications

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“…GaAs is a sensitive material in which Ga and As react readily with air and produces unstable native oxides. Also, oxygen diffusion and drifting of Ga and As under oxygen plasma treatment have been reported in [23]. To study the molecular and crystal lattice vibrations, surface compositions, chemical environment, bonding and structure of the GaAs surface [24], Raman spectroscopy was used.…”

Section: Raman Spectroscopy Of Gaas Surfacementioning

confidence: 99%

“…The peak due to the native oxide of GaAs at 272.5 cm −1 (figure 3 and table 2) vanished after the activation. Instead of this peak, the strong peak at 347.8 cm −1 (figure 3 and table 2) was assigned as Ga 2 O 3 due to the oxidation of GaAs in the O 2 RIE plasma [27,23]. The formation of Ga 2 O 3 (347.8 cm −1 ) resulted from surface etching with plasma activation of GaAs, which depletes the volatile arsenic (interdiffusion with oxygen) and enriches the gallium [23,28].…”

Section: Raman Spectroscopy Of Gaas Surfacementioning

confidence: 99%

“…Instead of this peak, the strong peak at 347.8 cm −1 (figure 3 and table 2) was assigned as Ga 2 O 3 due to the oxidation of GaAs in the O 2 RIE plasma [27,23]. The formation of Ga 2 O 3 (347.8 cm −1 ) resulted from surface etching with plasma activation of GaAs, which depletes the volatile arsenic (interdiffusion with oxygen) and enriches the gallium [23,28]. The O 2 -RIE plasma activation significantly increases the absolute intensity of the chemical species due to the removal of carbon contamination and also results in GaAs surface oxidation [23,28].…”

Section: Raman Spectroscopy Of Gaas Surfacementioning

confidence: 99%

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Formation of gallium arsenide nanostructures in Pyrex glass

Howlader

Zhang²,

Deen³

2013

Nanotechnology

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In this paper, we report on a simple, low-cost process to grow GaAs nanostructures of a few nm diameter and ∼50 nm height in Pyrex glass wafers. These nanostructures were grown by sequential plasma activation of GaAs and Pyrex glass surfaces using a low-temperature hybrid plasma bonding technology in air. Raman analyses of the activated surfaces show gallium oxide and arsenic oxide, as well as suppressed non-bridging oxygen with aluminate and boroxol chains in glass. The flow of alkaline ions toward the cathode and the replacement of alkaline ions by Ga and As ions in glass result in the growth of GaAs nanostructures in nanopores/nanoscratches in glass. These nanopores/nanoscratches are believed to be the origin of the growth of the nanostructures. It was found that the length of the GaAs nanostructures may be controlled by an electrostatic force. Cross-sectional observation of the bonded interface using high-resolution transmission electron microscopy confirms the existence of the nanostructures. A possible application of the nanostructures in glass is a filtration system for biomolecules.

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Section: Raman Spectroscopy Of Gaas Surfacementioning

confidence: 99%